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Method for manufacturing semiconductor luminescent device, and semiconductor luminescent device made thereby

A light-emitting device and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor lasers, semiconductor devices, etc., can solve problems such as insufficient nitride semiconductor layers

Inactive Publication Date: 2005-06-29
SHARP KK
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is not enough to form a nitride semiconductor layer in the opening by epitaxial growth

Method used

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  • Method for manufacturing semiconductor luminescent device, and semiconductor luminescent device made thereby
  • Method for manufacturing semiconductor luminescent device, and semiconductor luminescent device made thereby
  • Method for manufacturing semiconductor luminescent device, and semiconductor luminescent device made thereby

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Embodiment Construction

[0040] The invention will be described below by way of illustrative embodiments with reference to the accompanying drawings. In the specification, "columnar multilayer structure" refers to a laminate including a nitride semiconductor layer formed on a part of an Si substrate by epitaxial growth. A "semiconductor light emitting device" refers to a light emitting device including at least one columnar multilayer structure on a Si substrate.

[0041] figure 1 is a schematic cross-sectional view of the semiconductor light emitting device according to the first embodiment of the present invention. figure 2 is a schematic plan view of the nitride semiconductor light emitting device 100 .

[0042] The nitride semiconductor light emitting device 100 includes a Si substrate 11 having a horizontal plate (111) and an insulating layer 31 on the Si substrate 11. The insulating layer 31 has a plurality of openings 32 through which the nitride semiconductor layer is grown. The insulati...

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Abstract

A method for manufacturing a semiconductor light-emitting device, the device comprising at least one first columnar multilayer structure on a substrate, and comprising a semiconductor compound semiconductor layer based on gallium nitride, the compound can be represented by the chemical formula In x Ga y Al z N (wherein x+y+z=1, 0≤x≤1, 0≤y≤1, 0≤z≤1) means that the method comprises a first step of forming a plurality of grooves in the substrate; and in A second step in which a plurality of first columnar multilayer structures are formed on the substrate, thereby being separated by the grooves.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor light emitting device, particularly a semiconductor light emitting device including a nitride semiconductor layer as a light emitting layer on a silicon substrate; and a semiconductor light emitting device manufactured by the method . Background technique [0002] A light-emitting device utilizing a nitride semiconductor material such as GaN, InN, AlN or their mixed crystals generally includes a nitride semiconductor layer as a light-emitting layer on a sapphire substrate, the semiconductor layer being made of, for example, In x Ga 1-x N crystals are formed. [0003] Recently, silicon (Si) substrates that are cheaper and larger in area than sapphire substrates have been produced. A lower-cost nitride semiconductor light-emitting device can be manufactured by using such a Si substrate instead of a sapphire substrate. [0004] A nitride semiconductor light emitting device man...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205H01L33/06H01L33/08H01L33/20H01L33/32H01L33/34H01L33/44
CPCH01L33/08
Inventor 小出典克
Owner SHARP KK
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