High frequency power transistor device

Abstract

An output-matched LDMOS RF power transistor device includes a semiconductor die having a plurality of interdigitated electrodes formed thereon, the electrodes each having respective input terminals and output terminals. An input lead is coupled to a first terminal of an input matching capacitor by a first plurality of conductors (e.g., bond wires), with a second terminal of the matching capacitor coupled to a ground. The first terminal of the matching capacitor is also coupled to the electrode input terminals by a second plurality of conductors. A conductive island isolated from the ground is coupled to the electrode output terminals by a third plurality of conductors. Output matching of the device is provided by a shunt inductance formed by a fourth plurality of conductors, which couple a first terminal of an output blocking capacitor the conductive island, with a second terminal of the blocking capacitor coupled to the ground. An output lead is coupled to the conductive island by a fifth plurality of conductors. In particular, the conductive island is disposed adjacent the semiconductor die, and the output blocking capacitor is disposed between the conductive island and output lead, such that transmission inductance through the respective third and fourth pluralities of conductors coupling the electrode output terminals to the blocking capacitor is sufficiently small to allow for output impedance matching of the transistor device at relatively high operating frequencies.

Description

technical field [0001] The present invention generally relates to the field of radio frequency power transistors, and more specifically relates to a method and device for output impedance matching of LDMOS power transistor devices. Background technique [0002] Radio frequency (RF) amplifiers are well known for their use, for example in wireless communication networks. With the recent dramatic increase in demand for wireless services such as Personal Communications Services (PCS), the frequency of operation of wireless networks has increased dramatically, now reaching gigahertz (GHz) frequencies. At such high frequencies, LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors have been preferred as RF power amplification devices, eg in antenna base stations. [0003] In a typical configuration, an LDMOS RF power transistor device typically includes multiple electrodes fabricated on a silicon die, each electrode containing multiple interdigitated transistors. The ...

AI Technical Summary

Problems solved by technology

[0008] For "lower frequency" applications such as 1500MHz, the LDMOS device 40 of FIG. large, making it difficult to effectively control the device

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