High frequency power transistor device
A transistor, radio frequency power technology, applied in semiconductor devices, electric solid state devices, semiconductor/solid state device components, etc., can solve the problems of large series inductance and difficulty in effective control of devices
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[0021] Referring to FIGS. 4 and 5 , a preferred LDMOS RF power transistor device 100 according to the present invention includes an input (ie, gate) lead frame 102 and an output (ie, drain) lead frame 104 secured to but electrically isolated from a conductive flange 145 . By way of example, ceramic substrate 143 may be used to isolate each leadframe 102 and 104 from flange 145 . Arranged on top of the flange is a metal (ie, source) substrate 103 . In a preferred embodiment, the metal (source) substrate comprises gold or an alloy of gold.
[0022] A pair of semiconductor (eg, silicon) dies 108 are affixed to the metal substrate 103, for example, using ultrasonic scrubbing and / or heating methods. A plurality of respective interdigitated electrodes 110 have been fabricated on each die 108 , each electrode having a respective input (gate) terminal 112 and output (drain) terminal 114 . The respective input and output terminals 112 and 114 of the electrodes 110 on the two dies 108...
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