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Method and apparatus for measuring parameters of electronic device

An electronic device and device technology, applied in the technical field of parameter improvement, can solve problems such as increasing cost and reducing reliability

Inactive Publication Date: 2006-02-01
SILERGY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The structure is basically satisfactory, but the use of external components increases cost and reduces reliability

Method used

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  • Method and apparatus for measuring parameters of electronic device
  • Method and apparatus for measuring parameters of electronic device
  • Method and apparatus for measuring parameters of electronic device

Examples

Experimental program
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Embodiment Construction

[0014] figure 2 A cross-section of a typical SOI device is shown, which includes a substrate layer 201 and a buried oxide layer 202 . Following standard fabrication techniques for this device, the remaining layers are indicated. The device includes a source 204 , a gate 205 and a drain 206 . A variety of commercially available devices exist, and the particular device used is not critical to the invention.

[0015] In a typical application, the substrate 201 is directly connected to the source layer, such as image 3 shown. This connection is located within the semiconductor chip, as image 3 As shown, dashed edge 309 represents the outer edge of the device. Typically, a single outer package includes 3 terminals representing source, gate and drain and a small contact also connected to the drain.

[0016] figure 1 In using external capacitors 105 and 106, it fails to take advantage of the inherent capacitance between substrate 201 and drain 206, as image 3 The capacito...

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PUM

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Abstract

The inherent capacitance between the substrate and the drain of an SOI device is utilized as part of a circuit. The substrate is connected to a sensing pin brought external to the chip, and other electronic components are hooked up to form a circuit that includes and operates with the inherent capacitance between the substrate and the drain.

Description

technical field [0001] The present invention relates to improved techniques for measuring parameters of electronic devices, particularly silicon-on-insulator (SOI) and similar devices. Background technique [0002] figure 1 A prior art structural example is shown in which two semiconductor devices 102 and 103 are constituted with other elements to form a half-bridge circuit. The devices may be MOS devices, SOI, or other types of devices. Devices are generally fabricated using known techniques, wherein various desired layers are deposited on a substrate 201, such as figure 2 shown. Devices 102 and 103 are generally fabricated on a chip, and boundary 125 represents the outer edge of the chip. [0003] Such as figure 1 As shown, a standard application involves using external capacitors 105 and 106 to measure the output of the half bridge. Sense leads 107 are typically connected to the outside of the chip on which SOI devices 102 and 103 reside. The sense leads can be me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L27/07G01R31/26H01L21/66H01L27/12
CPCH01L29/78603H01L29/78624H01L27/1203H01L27/04
Inventor L·布尔迪永
Owner SILERGY CORP