Unlock instant, AI-driven research and patent intelligence for your innovation.

Grinding pad collation device

A pad organizer and phase stabilization technology, applied in the field of chemical mechanical polishing devices, can solve the problems of poor cleaning efficiency, falling off, and increasing the complexity of the manufacturing process.

Inactive Publication Date: 2006-03-15
MACRONIX INT CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the external brushing cannot remove the residual particles during the grinding process at any time, its cleaning effect is worse than that of the on-site brushing, and it will increase the complexity of the manufacturing process
Moreover, the diamond particles inlaid in the conventional polishing pad finisher often fall off from the polishing pad finisher due to the stress (Stress), thereby shortening its life.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grinding pad collation device
  • Grinding pad collation device
  • Grinding pad collation device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The present invention provides a polishing pad conditioner (Pad Conditioner), which can be applied to various chemical mechanical polishing (CMP) devices, such as rotary platen (Rotational Platen) grinding machine or linear moving (Linear ) Grinding machine, but the present invention can have related different variants, and all that meet the spirit of the present invention are applicable to the scope of the present invention.

[0026] figure 1 It is a three-dimensional schematic diagram of a polishing pad organizer according to a preferred embodiment of the present invention.

[0027] Please refer to figure 1 The polishing pad finisher includes a bottom layer 100, a part of phase stabilized metal oxide layer (Partially Stabilized Metallic Oxide) 102 and diamond particles (Diamond Grain) 104, wherein the material of partly phase stabilized metal oxide layer 102 is partially phase stabilized structural ceramics , such as partially stabilized zirconia (Partially Stabil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a grinding pad finisher, including a bottom layer, a partial phase-stabilized metal oxidizing layer and diamond particles. Its disposition mode: disposing a partial phase-stabilized metal oxidizing layer on the bottom layer, and distributing the diamond particles in the metal oxidizing layer. The metal oxidizing layer has the properties of acid corrosion resistance and phase tough variation, so able to prolong its life and prevent the diamond particles from dropping.

Description

technical field [0001] The present invention relates to a chemical mechanical polishing (CMP) device, and in particular to a polishing pad conditioner. Background technique [0002] In the semiconductor manufacturing process, as the size of components continues to shrink, the resolution of lithography exposure also increases relatively, and with the reduction of exposure depth of field, the requirements for the level of fluctuations on the wafer surface are more stringent. Therefore, the current wafer planarization (Planarization) is completed by the chemical mechanical polishing process. Its unique anisotropic grinding properties can not only be used for the planarization of the surface contour of the wafer, but also for the vertical And the production of the mosaic structure of horizontal metal interconnects (Interconnects), the production of shallow trench isolation of components in the front-end production process and the production of advanced components, the planarizat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/304B24B37/00B24B37/02
Inventor 洪永泰黄啟东
Owner MACRONIX INT CO LTD