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Mask read-only memory

A read-only memory and mask-type technology, applied in the field of memory, can solve problems such as inability to share size and increase

Inactive Publication Date: 2006-05-24
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these two codes have the disadvantages that the drains cannot be shared and the size increases during the production process.

Method used

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Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0026] Such as figure 2 As shown, each cell (cell) is composed of a diode (Diode), and the N-terminal of the diode is connected to the N-terminal of the adjacent diode of the same word line (WL), thereby forming a preliminary ground line BG. The preparatory ground BG is not directly connected to VSS; whether the preparatory ground BG is connected to VSS is determined by the element connected to the word line (WL) (the element is temporarily designated as an inverter here), The Via Code determines whether the cell is connected to the bit line BL.

[0027] Its action principle is as follows:

[0028] 1. If the vertical decoder is selected to BL1;

[0029] 2. BL1 is charged to logic high potential;

[0030] 3. If the horizontal decoder is selected to WL0;

[0031] 4. Diode D (0, 1) is turned on because it is connected to BL1 through the via code (Via code);

[0032] 5. BL1 is discharged to a low potential.

[0033] It can be seen from the above that the diode is a switch, ...

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Abstract

The present invention is a mask type read-only memory (Mask ROM), which includes a base layer, a first doped layer, a second doped layer and a code layer, the first doped layer is formed on the base layer, so as to serve as a preliminary ground line of the mask type read-only memory, the second doped layer is formed on the first doped layer, so as to form a switch with the first doped layer, and the coding layer is formed On the first doped layer and the second doped layer, when in operation, the switch determines to read a data of the encoding layer.

Description

(1) Technical field [0001] The invention relates to a memory, in particular to a mask memory. (2) Background technology [0002] Memory is divided into non-volatile memory and volatile memory. The non-volatile memory includes various read-only memories, such as Mask ROM. [0003] Mask memory can write permanent data and is suitable for mass production. It has a wide range of applications. For example, game programs in general game consoles exist in this kind of memory. [0004] Such as figure 1 As shown, the structure and operation principle of the mask read-only memory (Mask ROM) are generally the same, that is, first select the bit line (BL) in the vertical direction, and then select the word line (WL) in the horizontal direction. ), criss-crossing to the only point, which represents a turn-on element, and this turned-on element does not necessarily pull the BL potential to VSS, because the element may not be connected to BL. [0005] The traditional masked ROM archite...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/112G11C11/34
Inventor 郑一民
Owner WINBOND ELECTRONICS CORP
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