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Parameter monitoring system and method for wafer processing capacity per hour of wafer processing furnace

A wafer processing and monitoring system technology, applied in chemical instruments and methods, post-processing, post-processing details, etc., can solve the problem of inability to distinguish between automatic wafer processing and manual operation processing.

Inactive Publication Date: 2006-07-05
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, typical WPH parameter monitoring systems cannot differentiate between automated wafer handling and manual handling, or operator error such as wafer loading errors in the loading area of ​​the wafer processing furnace

Method used

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  • Parameter monitoring system and method for wafer processing capacity per hour of wafer processing furnace
  • Parameter monitoring system and method for wafer processing capacity per hour of wafer processing furnace
  • Parameter monitoring system and method for wafer processing capacity per hour of wafer processing furnace

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Embodiment Construction

[0023] The wafer processing furnace wafer throughput per hour (WPH) parameter monitoring system and method described below are a few exemplary embodiments. It will be apparent to anyone skilled in the art that the invention may be practiced without some or all of the specific details described below.

[0024] The wafer throughput per hour (WPH) parameter is an important metric for monitoring wafer processing furnace performance. However, wafer throughput per hour (WPH) parameters must be accurate and provide real useful information. In an embodiment of the invention, the determination of the wafer throughput per hour (WPH) parameter excludes manual wafer handling from automated wafer handling due to the unavoidable inconsistency in results due to operator-to-operator variability Too much sex. Therefore, including manual processing results in inaccurate results for wafer throughput per hour (WPH) parameters. In another embodiment, the present invention notifies an operator o...

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Abstract

The invention provides a parameter monitoring system and method for wafer processing capacity per hour of wafer processing furnace, which comprises a data base, an analytical equipment, a comparison apparatus and an output device, wherein the data bank includes two or more processed historical records of the chip processing stove, the analytical equipment includes a logical element. The invention also provides a parameter monitoring method for wafer processing capacity per hour of wafer processing furnace.

Description

technical field [0001] The present invention relates to a wafer processing furnace, and in particular to a wafer processing furnace productivity monitoring system and monitoring method. Background technique [0002] Wafer processing furnaces are used in many processes during semiconductor device production. For example: the ion implantation and wafer annealing process can be completed in the wafer processing furnace. Wafer processing furnaces can process individual wafers or process batches of wafers, depending on the state of the particular wafer processing furnace design and the requirements of the semiconductor process. [0003] Like most semiconductor processing equipment, wafer processing furnaces operate almost continuously on the production line. Wafer throughput per hour (WPH) is the most direct performance monitoring metric for a wafer processing furnace. The WPH parameter can be used to identify bottlenecks in semiconductor processing and other unfavorable condi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02H01L21/324H01L21/477
Inventor 张世昌王兴仁邱泉桦张杰钧郭培伟
Owner MACRONIX INT CO LTD
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