Active matrix display device

Abstract

An active matrix display device, characterized in that the device includes an active matrix circuit and a driver circuit formed on a substrate; the driver circuit at least includes a first thin film transistor and a second thin film transistor; the first thin film The transistor includes: a first semiconductor layer including a first source / drain region, a pair of lightly doped regions and a first channel formation region between them, and a first channel adjacent to the first channel via a first gate insulating layer The first gate electrode forming a region; the second thin film transistor includes: a second semiconductor layer including a second source / drain region and a second channel forming region between them, and a second semiconductor layer adjacent to the second channel through a second gate insulating layer The second gate electrode of the second channel formation region; wherein: the second channel formation region is in direct contact with the second source / drain region, and a pair of sections containing n-type impurities and p-type impurities are respectively It is formed adjacent to the second source / drain region, and at least one of the pair of sections is connected to an electrode.

Description

[0001] This application is a divisional application of the original application with the application number 99102192.4 and the filing date of February 9, 1997. The earlier application of the original application is JP96-48272, and the earlier application date is February 9, 1996. technical field [0002] The present invention relates to the structure of a semiconductor device and its manufacturing method, wherein p-channel and n-channel thin film transistors are formed on the same substrate. In particular, the present invention relates to circuit structures of complementary metallization semiconductor (CMOS) devices including thin film transistors disposed on glass substrates and methods of manufacturing the same. Background technique [0003] In one conventional technique used to fabricate thin film transistors, a silicon layer is formed on a glass substrate, and the silicon layer is used to fabricate thin film transistors. At present, most manufacturers of active matrix li...

AI Technical Summary

Problems solved by technology

[0016] Second, the existence of the threshold current flowing through the junction between the channel region 412 and the drain region 416 cannot be ignored

[0017] Third, since the mobility of the implanted boron ions is undesirable, some boron ions are inevitably doped into the channel region 412, so that basic electrical characteristics cannot be realized at all, or often cannot be realized.

[0018] Fourth, the high dopant ion implantation required for the process step shown in Figure 4(D) would overload the ion implanter or plasma dopant

cause various problems in these equipment due to contamination and its maintenance

[0019] The fifth problem is that implanting ions with high doping levels may lead to longer process times

[0020] The sixth problem occurs when annealing with laser

In this case, the effect of laser annealing is also very different between the two groups of regions, which is disadvantageous

There will be a big difference in the electrical characteristics between the n-channel thin film transistor and the p-channel thin film transistor shown on the left and right of Figure 4(D)

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