Method for manufacturing nitride luminous apparatus

Abstract

The invention mainly uses two above metals or alloys as combining layer to combine nitride light-emitting structure growing on low thermal conductivity substrate with high thermal conductivity substrate, eliminating the low thermal conductivity substrate by chemical etching, dry-etching or mechanical grinding method, and replacing the nitride light-emitting structure on the high thermal conductivity substrate. Simultaneously, also by transparent conductive layer and N-type nitriding layer forming ohm contact, largely improving current distribution and reducing light absorbing effect and then increasing light-emitting benefits of light-emitter.

Description

technical field [0001] The present invention relates to a method for manufacturing a nitride light-emitting device, in particular to a manufacturing method for replacing a nitride light-emitting structure with a high thermal conductivity substrate by forming and pressing a bonding layer. Background technique [0002] The known process of making nitride light-emitting devices is based on aluminum oxide (Al 2 o 3 ) is a substrate on which epitaxial growth is performed. Based on the observation of actual operation, it is found that it has some disadvantages: First, because the substrate itself is insulated and has poor conductivity, it is necessary to place the P-type and N-type electrodes on the same side during fabrication, thus increasing the size of the P-type and N-type electrodes. Occupied area, and reduce the effective light-emitting area of ​​the grain. Furthermore, since the conductivity of P-type nitrides is much lower than that of N-type nitrides, and the semi-tra...

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Problems solved by technology

Based on the observation of actual operation, it is found that it has some disadvantages: First, because the substrate itself is insulated and has poor conductivity, it is necessary to place the P-type and N-type electrodes on the same side during fabrication, thus increasing the size of the P-type and N-type electrodes. occupied area, and reduces the effective light-emitting area of ​​the die

Furthermore, since the conductivity of P-type nitrides is much lower than that of N-type nitrides, and the semi-transparent metal conductive layer is used as the ohmic contact layer, although the current can be evenly distributed, it is also due to the existence of the semi-transparent metal conductive layer. And greatly produce light absorption effect, and reduce luminous efficiency

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