Stacked photovoltaic element

A photoelectric element, stacked technology, applied in the field of solar cells, can solve problems such as inability to effectively implement photoelectric conversion, difficult to manage film thickness, and spectral sensitivity spectrum without wavelength selectivity

Inactive Publication Date: 2007-04-11
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, the range of the open circuit voltage that can be used in the middle unit and the bottom unit of the above-mentioned three-layer unit is limited to a narrow range of 0.48 (eV) to 0.54 (eV), and there is a limit in the bandgap adjustment method
Moreover, the adjustment of the current balance has to mainly rely on the adjustment of the film thickness
[0019] If the adjustment of the current balance is only limited to the film thickness, in addition to not being able to obtain a large open circuit voltage as a three-layer unit, there is also no wavelength selectivity in the spectral sensitivity spectrum of each constituent unit, and photoelectric conversion cannot be effectively implemented. The problem
Furthermore, it is difficult to manage the film thickness. If the film thickness of the middle unit varies, the generated current in the bottom unit also fluctuates, or if the film thickness of the bottom unit varies, the generated current in the middle unit fluctuates. As a result, there is a current balance shift, Problems such as reduction in conversion efficiency
[0020] In addition, the same problem also exists in the cell having the I-type layer of the μc-Si:H thin film described in JP-A-11-243218

Method used

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Examples

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Embodiment 1

[0074] This example is an example in which the photoelectric element of FIG. 1 was produced. First, the substrate of the photovoltaic element of the present invention was fabricated using the apparatus shown in FIGS. 9 and 10 .

[0075] The device 301 in FIG. 9 is a roll-to-roll type film forming device, and can simultaneously and continuously form different films in different spaces on the belt-shaped support 302 . 303, 304, and 305 are vacuum chambers for forming thin films by DC sputtering, and the formed thin films can be changed by changing the target material. Using a Ti target in the vacuum chamber 303, an Ag target in 304, and a ZnO target in 305, a Ti layer, an Ag layer, and a ZnO layer can be sequentially formed on the support.

[0076] Inside each vacuum chamber, there is a heater 310 for heating the strip-shaped support 302 from the back surface, and the strip-shaped support 302 is sandwiched, and a target 311 and an electrode 312 connected to the target are provi...

Embodiment 2

[0107] The same photovoltaic element as in Example 1 was formed except that a 2.8 μm ZnO layer by sputtering was used as a substrate instead of forming a ZnO layer by an electrolytic method as the lower transparent conductive layer 104 . As a result, it was found that, similarly to Example 1, good characteristics and yield were obtained.

Embodiment 3

[0109] In addition to the pH of 0.01 sccm flowing through the vacuum chamber 503 during the formation of the Type I layer of the bottom unit of Example 1 3 Except for the gas, the same photovoltaic element as in Example 1 was fabricated. As a result, it was found that, similarly to Example 1, good characteristics and yield were obtained.

[0110] In this way, according to the multilayer photoelectric element and the current balance adjustment method of the embodiment of the present invention, it is possible to manufacture a photoelectric element with high conversion efficiency at a high yield.

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Abstract

A stacked photovoltaic element contains a structure formed by sequentially arranging a metal layer 103, a lower transparent conductive layer 104, a first n-layer 105 of non-single-crystal silicon, a first i-layer 106 of microcrystal silicon, a first player 108 of non-single-crystal silicon, a second n-layer 109 of non-single-crystal silicon, a second i-layer 110 of microcrystal silicon and a second player 112 of non-single-crystal silicon on a support body 102. The first i-layer 106 and the second i-layer 110 are made to contain phosphor and the content ratio R1 of phosphor to silicon of the first i-layer 106 and the content ratio R2 of phosphor to silicon of the second i-layer 110 are defined by the formula of R2 < R1. With this arrangement, photovoltaic elements showing a high conversion efficiency can be manufactured with a high yield factor.

Description

technical field [0001] The present invention relates to optoelectronic components, in particular to solar cells. In particular, the present invention relates to improvement of conversion efficiency and manufacturing yield in a tandem solar cell having a pin junction formed of two or more I-type layers using a microcrystalline silicon (μc-Si:H) thin film. Furthermore, the present invention relates to a method of adjusting the current balance of each constituent unit in a tandem solar cell composed of an I-type layer using a microcrystalline silicon thin film. Background technique [0002] In recent years, thin-film solar cells using silicon-based non-single crystal (and non-polycrystalline) semiconductors, which are one of the optoelectronic elements, are more attractive than solar cells using single crystal or polycrystalline semiconductors because they can be placed on glass or metal plates, etc. Since it is formed over a large area on a relatively cheap substrate and the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/04H01L31/075H01L31/18H01L31/00H01L31/06H01L31/076H01L31/20
CPCH01L31/076Y02E10/548
Inventor 狩谷俊光
Owner CANON KK
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