Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Packaging mould with electrostatic discharge protection

A technology for electrostatic discharge protection and electrostatic charge, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., and can solve problems such as static electricity residual and damage.

Inactive Publication Date: 2007-05-09
ADVANCED SEMICON ENG INC
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Referring to FIG. 1b and FIG. 1c, the package substrate 12 is pushed out of the groove 11 by using movable thimble pins 131, 132. Since the ejection time is quite short, after the package substrate 12 is completely separated from the groove 11, it may still be Static electricity remains on the packaging substrate 12, but is not completely guided out by the inner wall 111 of the groove 11 and the positioning columns 112, 113, so it is still possible that the static electricity generated during the mold release may damage the chips on the packaging substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Packaging mould with electrostatic discharge protection
  • Packaging mould with electrostatic discharge protection
  • Packaging mould with electrostatic discharge protection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] FIG. 2 shows the package mold 2 for ESD protection of the present invention. The packaging mold 2 includes at least one groove 21 , and each groove 21 is used for accommodating a packaging substrate 22 . The groove 21 has an inner wall 211 . The inner sidewall 211 of the groove 21 is in electrical contact with the outer sidewall 221 of the packaging substrate 22 . The height of the outer wall 221 of the package substrate 22 is a first height H1, and the height of the inner wall 211 of the groove 21 is a second height H2, and the second height H2 is greater than the first height H1.

[0024] The groove 21 also has a plurality of positioning columns 212 , 213 , etc., for passing through the positioning holes 222 , 223 of the packaging substrate 22 , so that the packaging substrate 22 is positioned in the groove 21 . The positioning holes 222 , 223 of the package substrate 22 are in electrical contact with the positioning posts 212 , 213 of the groove 21 . The depth of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The package mould possesses at least one flute to accommodate at least one package base plate. The package base plate possesses outer sidewall with first height, and the flute possesses inner sidewall with second height. The outer wall is connected to the inner wall electrically, and the second height is larger than the first height in order to prolong the contact period between the outer wall and the inner wall when the base plate leaves package mould. Thus, static electricity produced in process of leaving the package mould will be discharged through the assembly. The invention reduces damages caused by electrostatic so as to increase package proporty.

Description

technical field [0001] The invention relates to a packaging mold, in particular, the invention relates to a packaging mold with electrostatic discharge protection. Background technique [0002] Figures 1a to 1c show the lower mold 1 of a currently existing packaging mold. The lower mold 1 needs to be molded together with an upper mold (not shown) to package the chip. The conventional packaging mold 1 includes a groove 11 . The groove 11 is used for accommodating a packaging substrate 12 . The groove 11 has an inner sidewall 111 . The inner sidewall 111 is in contact with the outer sidewall 121 of the packaging substrate 12 , wherein the height of the inner sidewall 111 is about the same as the height of the outer sidewall 121 . Moreover, the groove 11 also has a plurality of positioning posts 112 , 113 etc. for passing through the positioning holes 122 , 123 of the package substrate 12 , so that the package substrate 12 is positioned in the groove 11 . [0003] When obj...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/56
Inventor 洪志斌蒋荣生
Owner ADVANCED SEMICON ENG INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com