Surface passivation method for nuclear detector tellurium-zinc-cadmium wafer

Abstract

This invention relates to a nucleus detector Te cadmium and zinc crystal pad surface passivation. The method comprises the following steps: first to polish the crystal pad, surface erosion and deposition gold electrode and surface passivation and comprises four process and is characterized by the two step method in the surface passivation, which comprises the following steps: first to get the surface near to chemical metering; then to use mixture solution of NH#-[4]F / H#-[2]O#-[2] to make oxidation layer through passivation.

Description

technical field

[0001] The invention relates to a method for passivating the surface of a nuclear detector cadmium zinc telluride wafer, specifically an improved method for the passivation process of the last process in the manufacturing process of the nuclear detector cadmium zinc telluride wafer, belonging to the technical field of semiconductor detection material manufacturing. Background technique

[0002] Cadmium zinc telluride (CZT) compound semiconductor detection materials have a high average atomic number and a large forbidden band width, so the detectors made of these materials have a large absorption coefficient, a high count rate, and a small volume , easy to use, and can work at room temperature and so on. Cadmium zinc telluride CZT is a new type of radiation detector with high detection efficiency. Compared with silicon and germanium detectors, it can work at room temperature. Compared with traditional sodium iodide scintillator probes, it is smaller in size. ...