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Semiconductor laser and producing method thereof

A technology of semiconductors and lasers, applied in the field of electrode patterns of semiconductor lasers

Inactive Publication Date: 2004-04-07
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, for the manufacture of different types of laser chips, it is necessary to form a plurality of electrode pattern parts on one semiconductor wafer, and each of them corresponds to the length of the resonator of the chip, so it cannot be flexibly manufactured according to changes in the design of the laser chip.

Method used

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  • Semiconductor laser and producing method thereof
  • Semiconductor laser and producing method thereof
  • Semiconductor laser and producing method thereof

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Effect test

Embodiment approach 1

[0034] figure 1 Yes, it is the semiconductor laser R shown in the first embodiment of the present invention 1 perspective view. figure 2 is the laser R shown in the first embodiment 1 floor plan. Figure 3 shows the laser R shown in the fabrication of the first embodiment 1 The step of cutting a semiconductor wafer in the method.

[0035] Semiconductor laser (laser chip) R 1 It includes: a semiconductor layer part 1 composed of a laminated structure including multiple semiconductor layers and an electrode pattern part 3 formed on the upper surface of the semiconductor layer part 1, wherein the semiconductor layer laminated structure includes a light emitting layer, the semiconductor layer portion 1 has an electrode region 2 formed on its lower surface. Said semiconductor layer portion 1 has two cleavage planes 4 and 5 parallel to the chip width direction indicated by arrow B. figure 1 The arrow A in represents the length direction of the resonator. Semiconductor lase...

Embodiment approach 2

[0045] Figure 4 is the semiconductor laser R shown in the second embodiment of the present invention 2 floor plan.

[0046] The laser R shown in Embodiment Mode 2 2 and the laser R shown in Embodiment Mode 1 1 Basically the same, the only difference is: the laser R 2 The shape and arrangement of the electrode pattern part 13 and the laser R 1 The electrode pattern in part 3 is different. Components of the same type in the drawings are denoted by the same reference numerals, and descriptions related thereto are omitted.

[0047] In the laser R 2 Among them, the electrode pattern part 13 has a pair of right-angled triangle marks 16 on each side of the electrode pattern part 13 extending along the length direction of the resonator shown by the arrow A. Set mark 16 so that its total length M in the resonator length direction shown by arrow A 2 For example, it can be 200 μm, and the maximum length N in the chip width direction indicated by arrow B 2 For example, it can be...

Embodiment approach 3

[0052] Figure 5 It is a plan view of the semiconductor laser R3 shown in the third embodiment of the present invention.

[0053] In the laser R3, the strip-shaped electrode pattern portion 23 has a rectangular mark 26 on one side of the strip-shaped electrode pattern portion 23 extending in the resonator length direction indicated by arrow A. As shown in FIG. Set the mark 26 so that its total length M in the resonator length direction shown by arrow A 3 For example, it can be 300 μm, and its maximum length N in the chip width direction indicated by arrow B 3 For example, it can be 60 μm, so the total length M 3 with maximum length N 3 The ratio is 5:1.

[0054] According to the method for manufacturing the semiconductor laser shown in Embodiment 3, several rows of electrode patterns (see FIG. 3 ) are formed on the upper surface of the semiconductor surface in substantially the same manner as that shown in Embodiment 1, except that: In Embodiment 3, each electrode pattern...

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Abstract

A method for manufacturing a semiconductor laser device, comprising the steps of: forming an electrode pattern on an upper surface of a semiconductor wafer stacked at least a light emission layer; cutting the resultant semiconductor wafer for predetermined width to yield a plurality of semiconductor bars; and sectioning the semiconductor bars into a desired size to form semiconductor laser devices having a pair of cleavage surfaces which are parallel to a chip-width direction and distant from each other by a predetermined resonator length, wherein the electrode pattern formed in the step of forming an electrode pattern is continuous at least in a resonator-length direction.

Description

technical field [0001] The invention relates to a semiconductor laser and a method for manufacturing the semiconductor laser, in particular to an electrode pattern of the semiconductor laser. Background technique [0002] High power semiconductor lasers used for reading data from and writing data to optical data recording media such as CD-R / RW and DVD-R / RW have different optimal resonator lengths, the optimal The resonator length is determined for each optical data recording medium, and if a semiconductor laser whose resonator length is not suitable for the target optical data recording medium is used, a SCOOP error (noise caused by retroreflected light) may occur. Therefore, different kinds of optical data recording media require semiconductor lasers (laser chips) with optimum resonator lengths. [0003] These semiconductor lasers can be manufactured by the following conventional methods: First, at least one light-emitting layer is stacked on the upper surface of the semic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/02H01S5/042H01S5/10
CPCH01S5/1039H01S5/0202H01S5/0425H01S5/04254
Inventor 太田将之兼岩进治大岛昇
Owner SHARP KK