Trench Schottky rectifier

A rectifier and channel technology, which is applied in the field of Schottky barrier rectifier devices, can solve the problems of increasing complexity in the manufacturing process of graded doping distribution, and achieve the effects of low production process cost and simple use.

Inactive Publication Date: 2004-05-19
GEN SEMICON
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Unfortunately, the need for graded doping profiles adds complexity to the manufacturing process, and the resulting expense

Method used

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  • Trench Schottky rectifier
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  • Trench Schottky rectifier

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Embodiment Construction

[0034]Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, the invention may also be embodied in different ways and should not be limited to the specific embodiments set forth herein.

[0035] Referring now to FIG. 2, there is shown a Schottky barrier rectifier in accordance with the present invention. The rectifier 10 comprises a semiconductor region 12 of a first conductivity type (typically N-type conductivity) having opposing first and second sides 12a, 12b. The substrate semiconductor region 12 preferably includes a relatively highly doped cathode region 12c (shown as N+) bordering the first side 12a. As shown, the cathode region 12c is doped to approximately 5×10 19 / cm 3 The doping concentration of the first conductivity type. A drift region 12d (shown as N) of the first conductivity type preferably extends from the cathode region 12c to the second side 12b. As shown, for a 30 volt de...

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Abstract

A Schottky rectifier is provided. The Schotttky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region having a lower net doping concentration than that of the cathode region; (b) one or more trenches extending from the second face into the semiconductor region and defining one or more mesas within the semiconductor region; (c) an insulating region adjacent the semiconductor region in lower portions of the trench; (d) and an anode electrode that is (i) adjacent to and forms a Schottky rectifying contact with the semiconductor at the second face, (ii) adjacent to and forms a Schottky rectifying contact with the semiconductor region within upper portions of the trench and (iii) adjacent to the insulating region within the lower portions of the trench.

Description

technical field [0001] The present invention relates to rectifiers, and more particularly to Schottky barrier rectifying devices, and methods of forming these devices. Background technique [0002] A rectifier has relatively low resistance to current flow in the forward direction and high resistance to current flow in the reverse direction. Schottky barrier rectifiers are a type of rectifier that have been used in switch mode power supplies and other high speed power switching applications such as motor drives as output rectifiers. These devices are capable of delivering large amounts of forward current and support large reverse cut-off voltages. [0003] U.S. Patent No. 5,365,102 to Mehrotra et al., entitled "Schottky Barrier Rectifier With MOS Channel," the entire contents of which are hereby incorporated by reference, discloses Schottky Barrier Rectifiers with breakdown voltage ratios of Theoretically higher can be obtained by the ideal discontinuous parallel plane PN j...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/47H01L29/872
CPCH01L29/8725H01L29/872
Inventor 石甫渊陈世冠苏根政崔炎曼
Owner GEN SEMICON
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