Electrostatic discharge protective element for high voltage input pad
A technology of electrostatic discharge protection and high-voltage input, which is applied in the direction of electrical components, electric solid devices, emergency protection circuit devices, etc., can solve the problem of low breakdown voltage and achieve the effect of increasing the breakdown voltage value
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[0033] figure 1 As shown, it is a schematic diagram of a programmable memory device and its two-stage protection circuit.
[0034] Please refer to figure 1 The programmable memory device of the present invention is disposed on a substrate 100 , and the device includes a programmable memory element (and its internal circuit) 101 , a high voltage input pad 102 and a two-stage protection circuit 108 .
[0035] Wherein, the substrate 100 is, for example, a P-type substrate. The memory element 101 is disposed on the substrate 100, and the high-voltage input pad 102 is also disposed on the substrate 100, and the high-voltage input pad 102 and the memory element 101 are electrically connected to each other. of high voltage. In addition, a two-stage protection circuit 108 is disposed on the substrate 100 between the memory element 101 and the high-voltage input pad 102 to protect the memory element 101 from ESD damage.
[0036] In more detail, the two-stage protection circuit 108 ...
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