Electrostatic discharge protective element for high voltage input pad

A technology of electrostatic discharge protection and high-voltage input, which is applied in the direction of electrical components, electric solid devices, emergency protection circuit devices, etc., can solve the problem of low breakdown voltage and achieve the effect of increasing the breakdown voltage value

Inactive Publication Date: 2004-06-09
MACRONIX INT CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Therefore, the object of the present invention is to provide a kind of electrostatic discharge protection element applied to the high-voltage input pad, so as to improve the shortcoming that the breakdown voltage of the second element in the known two-stage protection circuit is too low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic discharge protective element for high voltage input pad
  • Electrostatic discharge protective element for high voltage input pad
  • Electrostatic discharge protective element for high voltage input pad

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] figure 1 As shown, it is a schematic diagram of a programmable memory device and its two-stage protection circuit.

[0034] Please refer to figure 1 The programmable memory device of the present invention is disposed on a substrate 100 , and the device includes a programmable memory element (and its internal circuit) 101 , a high voltage input pad 102 and a two-stage protection circuit 108 .

[0035] Wherein, the substrate 100 is, for example, a P-type substrate. The memory element 101 is disposed on the substrate 100, and the high-voltage input pad 102 is also disposed on the substrate 100, and the high-voltage input pad 102 and the memory element 101 are electrically connected to each other. of high voltage. In addition, a two-stage protection circuit 108 is disposed on the substrate 100 between the memory element 101 and the high-voltage input pad 102 to protect the memory element 101 from ESD damage.

[0036] In more detail, the two-stage protection circuit 108 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A static discharge protection element used in high voltage input pads as the second element of two segment protection circuit includes a basis, a first MOS transistor matched on the basis among which, the first MOS transistor includes a first grid applied by a bias VgI a first source and a first drain, and a second MOS transistor matched on the basis including a second grid, a second source and drain and the grid and source are connected to the ground, the second drain is electrically connected with the first drain.

Description

technical field [0001] The present invention relates to an electrostatic discharge protection device (ESD), and more particularly to an electrostatic discharge protection device applicable to a high-voltage input pad. Background technique [0002] Electrostatic discharge is the phenomenon of the movement of static electricity from non-conductive surfaces that can cause damage to semiconductors and other circuit components in integrated circuits. For example, a human body walking on a carpet can detect a static voltage of several hundred to several thousand volts in the case of high relative humidity, and a static voltage of about 10,000 volts in the case of low relative humidity. above the quiescent voltage. A static voltage of several hundred to several thousand volts may also be generated in a machine for packaging integrated circuits or an instrument for testing integrated circuits. When the above-mentioned charged body (human body, machine or instrument) touches the ch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60H02H7/00
Inventor 苏醒刘孟煌赖纯祥卢道政
Owner MACRONIX INT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap