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Preparation method of metal sulfide semiconductor nanocrystalline

A metal sulfide and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, sulfur compound, nanostructure manufacturing, etc., can solve the problems of metal sulfide semiconductor nanomaterials that have not yet been seen, and achieve easy construction, simple operation, and high purity Effect

Inactive Publication Date: 2010-05-12
TONGJI UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, so far, there has been no report on the preparation of metal sulfide semiconductor nanomaterials using artificial active membranes as templates.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The first step is to immerse the flat and smooth glass sheet in the commercially available collodion solution (C.R. grade, Shanghai bronzing material factory), repeat the pulling twice, and dry it naturally. The thickness on the glass sheet is about 0.2mm. Uniform, artificial active membrane whose size can be made according to the shape and size of the reactor.

[0017] In the second step, take 0.1mol / L of Hg(NO 3 ) 2 Solution 20mL and 0.1mol / L Na 2 20 mL of S solution was placed on both sides of the artificial active membrane, stirred with a 6511 electric mixer from Shanghai Standard Mold Factory, and reacted at room temperature for 48 hours. The reaction solution on both sides of the artificial active membrane was taken out, subjected to conventional centrifugation, and discarded for clarification. liquid, leaving the product. Next, wash with commercially available chemically pure acetone and deionized water in sequence. Remove the artificial active membrane, wash...

Embodiment 2

[0019] With 0.10mol / L CdCl 2 Solution 20mL replaces 0.10mol / L of Hg(NO 3 ) 2 Solution, other conditions and steps are exactly the same as in Example 1, and the obtained product is a spherical cadmium sulfide quasi-nanocrystal, and the average particle size of the product is 170nm. The performance is basically the same as that of HgS nanocrystals.

Embodiment 3

[0021] The first step is the same as in Example 1 except that the thickness of the artificial active film is 0.4mm. In the second step, take 0.15mol / L AgNO 3 Solution 40ml and 0.15mol / L Na 2 20ml of S solution was placed on both sides of the artificial active membrane. The whole system was placed in a dark place. The active membrane was washed sequentially with acetone and deionized water and combined to obtain Ag 2 S nanocrystal, after testing, the optical performance is the same as before, and the average particle size of the product is 28nm.

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PUM

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Abstract

The method for preparing metal sulfide semiconductor nano crystal by using template includes the following steps: firstly, using collodion cotton liquor and making it into the semi-transparent film which has uniform thickness and can meet designed thickness, size and form as artificial active film template, then using metal ion solution of zinc, cadmium copper, mercury, silver, lead, iron, cobaltand nickel whose concentration is 0.05-0.20 mol / L and ionic mole number ratio is correspondent to product chemical formula and providing the solution of sodium sulfide, ammonium sulfide, potassium sulfide and hydrogen sulfide of sulfur ion, respectively placing them at two sides of artificial active film, reacting for 24-48 hr, under the condition of room temp. and stirring, then centrifugal separating reaction solution, removing clear liquor, successively using acetone and deionized water to wash remained product, naturally-drying so as to obtain the metal sulfide semiconductor nano crystal whose grain size (or diameter) is 20-200 nm.

Description

technical field [0001] The invention relates to a preparation technology of metal sulfide semiconductor nanocrystals. The invention belongs to a method for preparing metal sulfide semiconductor nanocrystals by using a template. Background technique [0002] Metal sulfide semiconductor nanocrystals are semiconductor sulfide (quasi) nanoparticles and (quasi) nanorods with a nanometer (1 billionth of a meter) scale structure system with semiconductor characteristics. This semiconductor sulfide nanomaterial has quantum size effect and surface effect, has excellent optical, electrical, magnetic, catalytic and other properties, and has broad application prospects in electronics, biology, coatings, pharmaceuticals and other industries. Therefore, the large-scale production of metal sulfide semiconductor nanocrystals is of great significance to the development of the above industries. [0003] At present, among many preparation methods of metal sulfide semiconductor nanocrystals, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00C01B17/00H01L21/00
Inventor 吴庆生刘金库丁亚平
Owner TONGJI UNIV
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