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Method for fabricating thin film transistors

A technology of thin film transistor and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., can solve the problem of time-consuming lithography manufacturing process, and achieve the effect of saving manufacturing cost

Active Publication Date: 2004-12-29
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of making optoelectronic display devices and sensor thin film transistors, the photolithographic manufacturing process takes many times longer

Method used

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  • Method for fabricating thin film transistors
  • Method for fabricating thin film transistors
  • Method for fabricating thin film transistors

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Experimental program
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Embodiment Construction

[0050] Compared with the production process of the traditional six photomasks, the present invention discloses a method for effectively fabricating thin film transistors using five photolithographic photomasks, and the composition and size of the active transistors of the thin film transistor device manufactured by the present invention are similar to those of The same as the traditional six-pass photomask manufacturing process. To simplify the description, the present invention fabricates a p-channel thin film transistor, but is not limited thereto, as long as the dopant is changed, an n-channel device can be fabricated.

[0051] Figure 2A ~ 2K It is a schematic cross-sectional view of fabricating a p-channel thin film transistor by using five photolithography photomasks according to an embodiment of the present invention. like Figure 2A As shown, firstly, a planarized glass substrate 202 is provided, and two film layers are stacked on its surface, a buffer layer 204 and ...

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Abstract

A method is disclosed for forming a thin film transistor. A photoresist layer is formed on top of the preliminary substrate. A portion of the photoresist layer is selectively removed in a single exposure process to form a photoresist pattern having a two-portion structure with a first portion having a first width and a second portion underneath the first portion with a second width. Such a photoresist pattern helps to reduce the number of mask processes used for forming the thin film transistor.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a thin film transistor applied to photoelectric display devices, sensors and the like. Background technique [0002] The process of fabricating semiconductor integrated circuits and devices requires multiple photolithography steps to define and form circuit designs required by various specific circuit elements and manufacturing processes. The traditional photolithography system projects a specific circuit or element pattern defined by a photomask on a flat substrate covered with a photosensitive film (photoresist layer). After the pattern is exposed, the photosensitive film is developed to leave A circuit or device pattern on a lower substrate, which is subsequently subjected to manufacturing process steps such as etching and doping. In the process of fabricating photoelectric display devices and sensor TFTs, the photolithography pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336G03F7/20H01L21/00H01L21/44H01L29/786
CPCH01L29/66757
Inventor 陈坤宏
Owner AU OPTRONICS CORP