Low-leakage current thin film transistor circuit

Abstract

This invention provides a kind of Low-Leakage-Current thin film transistor circuit. It can reduce the leakage current and not take up many pixel areas. It increases the open rate, reduces the Newton's ring effect. This circuit consists of a first film transistor, a datawire and a regulating capacitor. The first film transistor consists of a grid and a semi-conductor layer, which consists of a drain region and a source region. The datawire connects to the drain region of the first film transistor. The regulating capacitor includes a first electrode, which connects to the source region of the first film transistor. The part of the regulating capacitor is covered by datawire.

Description

technical field [0001] The invention relates to a thin film transistor (thin film transistor; TFT) circuit with low leakage current. Background technique [0002] Nowadays thin film transistors are widely used in displays. However, as the number of gray scales of the display increases, the requirement for low leakage current becomes more and more stringent. A schematic diagram of a circuit that can achieve low leakage current is shown in figure 1 . It can be seen that in addition to the common storage capacitor 116 (storage capacitor), there is an additional adjusting capacitor (adjusting capacitor) 106 . The adjustment capacitor 106 is located at the source 122 of the first TFT 102 . [0003] The top view of the configuration of the circuit in the prior art is as follows: figure 2 . It can be seen that the adjustment capacitor 206 and the storage capacitor 216 are located in the pixel. In this way, the adjustment capacitor 206 will occupy a part of the area of ​​the...

AI Technical Summary

Problems solved by technology

Then the aperture ratio (aperture ratio) is reduced, so that the brightness of the display is greatly reduced, and it is easy to produce Newton ring effect (Newton ring effect) due to component reflection

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