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CMOS thin film transistor and display device using the same

A technology for thin film transistors and display devices, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., and can solve the problems of complex thin film transistor processes.

Active Publication Date: 2005-02-02
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are problems even in the disclosed fabrication process due to the complex process of forming thin film transistors with channels of different lengths

Method used

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  • CMOS thin film transistor and display device using the same
  • CMOS thin film transistor and display device using the same
  • CMOS thin film transistor and display device using the same

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Embodiment Construction

[0018] The present invention will be described in detail with reference to the accompanying drawings and exemplary embodiments. For reference, like reference numerals designate corresponding parts throughout the specification.

[0019] Figure 1A , 1B , 1C, 1D, 1E, 1F, and 1G sequentially illustrate a process for manufacturing a CMOS thin film transistor according to an exemplary embodiment of the present invention. Figure 1A Discussion follows immediately, while the relevant Figures 1B-1F Discussion will be provided in detail later.

[0020] like Figure 1A As shown in , after disposing a polysilicon film on the substrate 10, by setting a first mask (not shown) on the substrate 10 and etching the polysilicon film, in the N-type thin film transistor region 10a and the P-type thin film transistor region Polysilicon patterns 11a, 11b are respectively formed on 10b. The substrate 10 is provided with an N-type TFT region 10a and a P-type TFT region 10b.

[0021] In the case ...

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Abstract

A CMOS thin film transistor and a display device using the same the CMOS thin film transistor has improved electrical characteristics, such as, current mobility and threshold voltage. The CMOS thin film transistor is fabricated such that the direction of active channels of the P-type thin film transistor and the direction of active channels of the N-type thin film transistor are different from each other, Primary grain boundaries included in the P-type thin film transistor are angled such that they are at an angle of about 60 to about 120 DEG with respect to an active channel direction. Primary grain boundaries included in the N-type thin film transistor are angled such that they are at an angle of about -30 DEG to about 30 DEG . The active channels are formed in polycrystalline silicon.

Description

[0001] This application claims priority from Korean Patent Application No. 2003-37246 filed in the Korean Patent Office on Jun. 10, 2003, the disclosure of which is incorporated herein by reference. technical field [0002] The present invention relates to a CMOS thin film transistor and a display device using the same, more particularly, to a P-type thin film transistor and an N-type thin film transistor in which there is substantially no difference between the absolute value of the current mobility and the absolute value of the threshold voltage. Different CMOS thin film transistors and display devices using them. Background technique [0003] Generally, circuits using complementary metal oxide semiconductor thin film transistors (CMOS TFTs) are used to drive active matrix liquid crystal display (LCD) devices, organic electroluminescent (EL) devices, and image sensors. However, the absolute value of the threshold voltage of a thin film transistor (TFT) is generally greater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L21/84H01L27/12H01L29/04H01L29/786
CPCH01L29/78675H01L27/1285H01L29/04H01L27/1296H01L29/78696H01L29/786
Inventor 朴志容具在本朴惠香
Owner SAMSUNG DISPLAY CO LTD