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Production method for semiconductor device

A manufacturing method and semiconductor technology, which can be used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as increased manufacturing costs of semiconductor devices, many semiconductor device manufacturing processes, and adverse effects on yields.

Inactive Publication Date: 2005-03-09
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, if the above-mentioned manufacturing method is adopted, the manufacturing process of the semiconductor device is many, so there is a bad influence on the yield, and the increase of the manufacturing cost of the semiconductor device cannot be avoided.

Method used

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  • Production method for semiconductor device
  • Production method for semiconductor device
  • Production method for semiconductor device

Examples

Experimental program
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Embodiment Construction

[0032] Hereinafter, a preferred embodiment (hereinafter referred to as the present embodiment) of the method for manufacturing a semiconductor device according to the present invention will be described with reference to the drawings.

[0033] image 3 The structure of the plasma processing apparatus 100 used in each embodiment of the present invention is shown. refer to image 3 The plasma processing apparatus 100 includes a reaction container 104 forming a processing chamber 102 that accommodates a holding table 106 for holding a substrate W to be processed. The upper part of the aforementioned reaction vessel 104 is electrically insulated from other parts of the reaction vessel 104 by the insulating material 105 . The shower head 114 supplied with plasma gas from the line 122 is disposed so as to face the substrate W to be processed on the aforementioned holding table 106 . The shower head 114 has a plurality of openings 114 a through which the plasma gas supplied from t...

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Abstract

A method of efficiently fabricating a semiconductor device with less fabrication steps is provided. A second inter-layer insulation film is removed to form an aperture by substantially using a first hard mask film as a mask in accordance with the method of fabricating a semiconductor device having a multi-layer wiring structure using a dual-damascene method. In addition, an etching stopper film is removed, and then a first inter-layer insulation film is removed to form a via hole in the first inter-layer insulation film.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more specifically to a method of manufacturing a semiconductor device having a multilayer wiring structure with fewer manufacturing steps and high efficiency. Background technique [0002] With the miniaturization of semiconductors, many semiconductor elements can be formed on a substrate in today's cutting-edge semiconductor devices. In this semiconductor device, one wiring layer is not enough to connect the semiconductor elements on the substrate, and a so-called multilayer wiring structure in which multiple wiring layers are laminated through an interlayer insulating film get used. [0003] Especially recently, a groove as a wiring part (hereinafter referred to as "wiring groove") and a hole as a via contact (hereinafter referred to as "via hole") are formed in advance in the interlayer insulating film, and the above-mentioned wiring is connected with a conductor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/302H01L21/033H01L21/3065H01L21/311H01L21/768
CPCH01L21/76811H01L21/31144H01L21/0332H01L21/76813H01L21/3205
Inventor 前川薰
Owner TOKYO ELECTRON LTD