Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film transistor array

A technology of thin film transistors and data wiring, applied in transistors, optics, instruments, etc., can solve problems such as capacitor leakage, achieve the effects of increasing storage capacitors, high display quality, and reducing the probability of capacitor leakage

Inactive Publication Date: 2005-03-23
AU OPTRONICS CORP
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a thin film transistor array, which can improve the problem of capacitance leakage caused by particle pollution, and increase the storage capacitance without affecting the aperture ratio and the reliability of the transistor components, so as to improve the performance of the liquid crystal panel

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor array
  • Thin film transistor array
  • Thin film transistor array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The present invention increases the storage capacitance through the shared wiring with branches, and the branches of these shared wirings correspond to the parts with poor luminous efficiency in the pixel area, so the influence on the aperture ratio of the pixel structure can be reduced. The following examples will be given to illustrate the present invention, but they are not intended to limit the present invention. Those skilled in the art can make appropriate modifications to the following examples according to the spirit of the present invention, but still fall within the scope of the present invention.

[0039]The thin film transistor array of the present invention can form a Multi-Domain Vertical Alignment (MVA) liquid crystal display panel together with a known and suitable color filter and a known and suitable liquid crystal layer. Generally speaking, the color filter of a traditional multi-domain vertically aligned liquid crystal display panel is mainly composed...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a film transistor array, which has several shared wirings to provide storing capacitance for pixel. Especially, each shared wiring has several branched wirings. The shared wiring and the branched wirings constitutes storing capacitance with pixel electrode. The branched wirings are located at the poor light efficiency spots of a pixel area, so the pixel storing capacitance can be increased when the pixel uncork ratio is not influenced, and the efficiency of liquid crystal panel can be improved.

Description

technical field [0001] The present invention relates to a display device, and in particular to a thin film transistor array capable of increasing storage capacity. Background technique [0002] The rapid progress of the multimedia society is mostly due to the dramatic progress of semiconductor components or display devices. As far as displays are concerned, thin film transistor liquid crystal displays (Thin FilmTransistor Liquid Crystal Display, TFT-LCD) with superior characteristics such as high image quality, good space utilization efficiency, low power consumption, and no radiation have gradually become the mainstream of the market. [0003] A thin film transistor liquid crystal display (TFT-LCD) is mainly composed of a thin film transistor array, a color filter and a liquid crystal layer. The thin film transistor array is composed of a plurality of thin film transistors arranged in an array and a pixel electrode (pixel electrode) corresponding to each thin film transist...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/133G02F1/136H01L29/786
Inventor 来汉中
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com