Texture controlling method of high temperature molten crystal growth axially

A high-temperature melt and crystal growth technology, applied in the field of crystal texture control of metal materials, can solve problems such as failure to industrial application, and achieve the effect of low equipment cost, reduced requirements and investment

Inactive Publication Date: 2005-05-11
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, the texture control technology of high-temperature melts in a magnetic field has not been applied industrially

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Heat the master alloy and slowly increase the temperature to 1280°C (1.5°C / min) at 1250°C; 2. Keep the temperature at 1280°C, apply a static magnetic field with a magnetic field strength of 1.5T; hold at this temperature for 5 minutes; 3. Melt temperature After the field is uniform, the solidification process is controlled at a solidification rate of 8°C / min; until 1180°C.

Embodiment 2

[0027] Heating the master alloy, heating at 20°C / min in the range of 1050-1250°C, and slowly heating up to 1280°C (1.5°C / min) at 1250°C; 2. Keep the temperature at 1280°C, apply a static magnetic field with a magnetic field strength of 700mT, This temperature is maintained for 8 minutes; 3. After the melt temperature field is uniform, the solidification process is controlled at a solidification rate of 2°C / min; until 1180°C.

Embodiment 3

[0029] Heat the master alloy at a rate of 15°C / min in the range of 1050-1250°C, and slowly heat up to 1280°C (1.5°C / min) at 1250°C; 2. Keep the temperature at 1280°C, apply a static magnetic field with a magnetic field strength of 200mT, The temperature is maintained for 15 minutes; 3. After the melt temperature field is uniform, the solidification process is controlled at a solidification rate of 0.8°C / min; until 1180°C.

[0030] In the above three embodiments, Tb can be obtained 0.3 Dy 0.7 Fe 1.95 The large-volume crystal grains are parallel to the direction of the magnetic field according to the crystal texture of the easy axis orientation, the microstructure is free of cracks and micropores, and no Widmanite acicular precipitates and twin crystal structures (often appearing in the directional solidification of the material In the organization, it is unfavorable to the magnetostrictive performance).

[0031] In Embodiment 3, the equipment investment is minimal, no special equi...

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PUM

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Abstract

A segmental texture control method for growing crystal in easy axis direction in high-temp molten substance features that when the temp is near the smelting point, the temp is slowly raised and is held for a certain time in static magnetic field for obtain uniform temp in the high-temp molten substance, when the intensity of static magnetic field is higher, the molten substance is solidified at higher speed, and when the intensity of static magnetic field is lower, the molten substance is solidified at low speed.

Description

Technical field [0001] The invention relates to a method for controlling the crystal texture of a metal material, in particular to a method for controlling the texture along the easy axis orientation of crystal growth in a high-temperature melt. Used in the technical field of metal materials. Background technique [0002] The use of magnetic field to control the texture of crystal growth in melts whose temperature is much higher than the Curie point is a new technology that has been explored recently. Magnetocrystalline anisotropy is related to changes in temperature. It is generally defined that after the temperature exceeds the Curie point, the magnetocrystalline anisotropy of magnetic materials disappears with the disappearance of magnetism. In recent actual observations, even in the distant Near the melting point above the Curie point, residual magnetocrystalline anisotropy still exists. Therefore, under the action of a magnetic field, if ΔE=u 0 ΔχVH A 2 / 2>kT is satisfie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22D27/02B22D27/04
Inventor 邓沛然李建国许振明
Owner SHANGHAI JIAO TONG UNIV
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