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Semiconductor device having fuse and capacitor at the same level and method of fabricating the same

A technology of semiconductors and capacitors, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc.

Inactive Publication Date: 2005-05-18
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0016] However, in order to form the upper plate 19, the fabrication of conventional MIM capacitors requires additional photolithography and etching processes

Method used

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  • Semiconductor device having fuse and capacitor at the same level and method of fabricating the same
  • Semiconductor device having fuse and capacitor at the same level and method of fabricating the same
  • Semiconductor device having fuse and capacitor at the same level and method of fabricating the same

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Embodiment Construction

[0043] Now, the present invention will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the present invention are shown. However, the present invention can be implemented in different forms, and the present invention should not be limited to the embodiments presented here. Moreover, these embodiments are provided to make this description comprehensive and complete, and to fully convey the scope of the present invention to those skilled in the art. In the drawings, the thickness of each layer and each region is exaggerated for clarity. Throughout the specification, the same number represents the same element.

[0044] figure 2 Is a plan view illustrating a semiconductor device according to a preferred embodiment of the present invention, Figure 8 Is along figure 2 Sectional view of the line I-I. First, refer to figure 2 with 8 A semiconductor device according to a preferred embodiment of the present invention wi...

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Abstract

In a semiconductor device and its manufacturing method, a fuse and a capacitor are formed in the same plane on a semiconductor substrate having a fuse region and a capacitor region. The fuse is located on the fuse area and the lower plate is located on the capacitor area. The lower plate is on the same plane as the fuse. In addition, the upper plate is located on the lower plate, and the cover layer is interposed between the lower plate and the upper plate. Therefore, fuses and capacitors can be formed simultaneously, thereby minimizing photolithography and etching process steps.

Description

[0001] Cross reference of related applications [0002] This application claims the priority of Korean Patent Application No. 2003-66650 filed on September 25, 2003, and the entire contents of which are cited and referred to herein. Technical field [0003] The present invention relates to a semiconductor device and a manufacturing method thereof. More specifically, the present invention relates to a semiconductor device having a fuse and a capacitor on the same plane and a manufacturing method thereof. Background technique [0004] A merged storage and logic device (such as a system-on-a-chip (SOC)) is configured to include both storage elements and logic elements in one semiconductor device. Logic elements typically include analog capacitors. [0005] Fuses are widely used in memory devices to provide memory devices with redundancy. The use of fuses can increase the yield of memory devices. As for highly integrated semiconductor devices, the height of semiconductor devices will ...

Claims

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Application Information

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IPC IPC(8): H01L23/52H01L21/02H01L21/3205H01L21/82H01L21/822H01L21/8242H01L23/522H01L23/525H01L27/04H01L27/08H01L27/10H01L27/108
CPCH01L23/5223H01L23/5256H01L27/0805H01L28/40H01L2924/0002H01L2924/00H01L27/10
Inventor 朴乘汉李基永
Owner SAMSUNG ELECTRONICS CO LTD
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