Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for manufacturing semiconductor laser element

一种制造方法、半导体的技术，应用在半导体激光器、激光器、光波导半导体的结构等方向，能够解决不能防止热辐射特性、劣化、难以改善运行性能等问题，达到高成品率、提高成品率、降低元件电阻的效果

Active Publication Date: 2006-01-18
SHARP FUKUYAMA LASER CO LTD
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, only by adjusting the width of the eaves portion 22 of the semiconductor laser element 13, the deterioration of the heat radiation characteristics cannot be prevented, and it is difficult to improve the operation performance at high temperature

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing semiconductor laser element
  • Method for manufacturing semiconductor laser element
  • Method for manufacturing semiconductor laser element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] Preferred embodiments of the present invention are described below with reference to the accompanying drawings.

[0046] figure 1 To show a cross-sectional view of a semiconductor laser element 30 manufactured by the semiconductor laser element manufacturing method according to the first embodiment of the present invention. This semiconductor laser element 30 is constructed so that a laser beam can be emitted when a current flows in a forward direction and is used for example in an optical pickup tube. This semiconductor laser element 30 includes a compound semiconductor multilayer structure 31 , a current blocking layer 32 , an n-type electrode 33 , a p-type electrode 34 and a gold overlaid layer 35 .

[0047] The compound semiconductor multilayer structure 31 is structured such that the first buffer layer 37, the second buffer layer 38, the first cladding layer 39, the active layer 40, the second cladding layer 41, and the etching stopper layer 42 provided with the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
coating thicknessaaaaaaaaaa
coating thicknessaaaaaaaaaa
coating thicknessaaaaaaaaaa
Login to View More

Abstract

A method of manufacturing a semiconductor laser element having an enhanced yield ratio is provided. The semiconductor laser element having a cladding layer, an intermediate layer, and a capping layer is manufactured as follows. At the laminating step, a plurality of lamination layers are laminated in a laminating direction. Subsequently, at protruding step, a cladding layer, a capping layer and a precursor of an intermediate layer are formed so that widthwise lengths of the cladding layer and the capping layer become shorter or uniform in the laminating direction, and so that the precursor of an intermediate layer protrudes widthwise from the cladding layer and the capping layer. At removing step, an protrusion of the precursor of the intermediate layer is removed.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor laser element having a ridge. [0002] In the present invention, "lamination layer (lamination layer)" refers to a layer that is laminated to form a semiconductor laser element, and the use of "width direction" is equivalent to the direction perpendicular to the lamination direction and the extending direction of the ridge, Wherein the lamination layer is laminated in the lamination direction. The use of "the length in the width direction" means equivalent to the length in the width direction. Background technique [0003] A semiconductor laser element is used as a light source for reading and writing information therefrom on an optical recording medium. For example, red semiconductor laser elements are used in optical pickup tubes to read and write information from digital versatile discs (DVDs). A higher laser beam output is desired for a semiconductor laser element to ther...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/22
CPCH01S5/227
Inventor 川户伸一
Owner SHARP FUKUYAMA LASER CO LTD