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Deposition method of TiN film having a multi-layer structure

A multi-layer structure and deposition technology, which can be used in coatings, metal material coating processes, gaseous chemical plating, etc., and can solve problems such as device performance degradation.

Inactive Publication Date: 2006-02-22
WONIK IPS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, since the device is covered with a metal nitride film with high resistivity, the performance of the device deteriorates

Method used

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  • Deposition method of TiN film having a multi-layer structure
  • Deposition method of TiN film having a multi-layer structure
  • Deposition method of TiN film having a multi-layer structure

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Embodiment Construction

[0016] Figure 1 to Figure 4 A method of depositing a metal nitride film according to an embodiment of the present invention is described in . A core thin film deposition method is described herein. Figure 5 and Figure 6 The principle of the apparatus for depositing thin films to practice the invention is shown in . in addition, Figure 7 and Figure 8 An embodiment in which the present invention is applied to a semiconductor device is described in .

[0017] figure 1 is used to explain the principle of the method of depositing a metal nitride film having a multilayer structure according to the present invention.

[0018] In the process of depositing a metal nitride film for a semiconductor device, the present invention is suggested as one of various methods for making the Stability to step coverage and exposure to air / moisture is maximized without degrading its performance.

[0019] The basic principle of the present invention is to realize the deposition of the met...

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Abstract

Provided is a method of depositing a metal nitride film having a multilayer structure and different deposition speeds on a substrate. The method is performed by forming a first lower metal nitride film on the substrate at a first deposition speed, forming a second lower metal nitride film on the first lower metal nitride film at a second deposition speed, and forming an upper metal nitride film having a large content of nitrogen (N) on a lower TiN film which is formed by the forming of the first lower metal nitride film and the second lower metal nitride film, at a third deposition speed, to improve stability with respect to exposure to air / moisture. The deposition speed of the metal nitride film having a multi-layer structure satisfies a relationship that the second deposition speed >=the first deposition speed >=the third deposition speed.

Description

technical field [0001] The invention relates to a method for depositing thin films, in particular to a method for depositing a metal nitride (TiN) film with a multilayer structure. Background technique [0002] In the semiconductor manufacturing process, the process of depositing the electrode on the upper part of the capacitor or the process of depositing the contact barrier metal needs to be performed at a lower The ability to deposit at high temperatures and requires excellent step coverage characteristics. Various problems arise when metal nitride films are deposited at lower temperatures, such as high specific resistance and impurity content and rapid change in impedance when exposed to air / moisture. As a result, since the device is covered with a metal nitride film having high resistivity, the performance of the device deteriorates. A typical example of a metal nitride film is titanium nitride (TiN). Thus, there is a great need in the semiconductor field for a depos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3205
CPCC23C16/34C23C16/45523H01L21/76846H01L21/318H01L21/3141H01L21/022H01L21/02271H01L21/0228H01L21/02186C23C16/45525
Inventor 朴永熏李相奎徐泰旭
Owner WONIK IPS CO LTD
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