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Thermal switching element and method for manufacturing the same

A manufacturing method and technology of thermal switch, which can be used in electrical components, thermoelectric devices, refrigerators, etc., and can solve problems such as difficulty in electron transmission characteristics.

Active Publication Date: 2006-03-08
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, we have to consider the influence of the electron density in the element on the thermoelectric characteristics of the element, but it is difficult to actively control the electron transport characteristics in existing electric heating elements such as Peltier elements

Method used

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  • Thermal switching element and method for manufacturing the same
  • Thermal switching element and method for manufacturing the same
  • Thermal switching element and method for manufacturing the same

Examples

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Embodiment 1

[0168] In Example 1, SrTiO was used as the transformation body 3 , produced as Figure 19 The thermal switching element 1 shown. Al is used for electrode 2a and electrode 2b, and Al is used for insulator 9 2 o 3 , Au is used for electrode 10. The manufacturing method of the thermal switch element 1 used in embodiment 1 is as follows Figures 20A-20E shown.

[0169] Initially, in SrTiO as transformation 3 3 Resist 20 ( Figure 20A ). As for the resist, a positive resist material is used, and a general resist coating method is used. Next, an Al layer 21 is deposited on the whole by sputtering ( Figure 20B ). Next, by lift-off, the resist 20 and the portion on the resist 20 in the Al layer 21 are removed to form the electrode 2a and the electrode 2b ( Figure 20C ). Next, the sputtering method is used to form Al 2 o 3 The insulator 9( Figure 20D ). Finally, an electrode 10 made of Au was formed by sputtering ( Figure 20E ),production Figure 19 The thermal sw...

Embodiment 2

[0177] In Example 2, SrTiO doped with Cr in the range of 0.1 atomic % to 10 atomic % was used as the transformation body 3 3 (Cr:SrTiO 3 ),production Figure 22 The thermal switching element 1 shown.

[0178] Initially, using SrTiO 3 As the substrate 22, SrRuO is formed on the substrate 22 by sputtering 3 constituted electrode 2a. Secondly, on the electrode 2a is formed by Cr:SiTiO 3 The formed transition body 3 was further formed with an electrode 2b made of Pt. The sputtering method is also used in forming the transition body 3 and the electrode 2b. The transformation body 3 and the electrode 2a are formed in a heating atmosphere at about 450°C to 700°C. Wherein, the thicknesses of the electrode 2a, the transition body 3 and the electrode 2b are about 200 nm, 300 nm and 2 μm, respectively.

[0179] For the thermal switching element 1 produced in this way, by applying a voltage between the electrodes 2a and 2b and applying electric energy to the transition body 3, cha...

Embodiment 3

[0183] In Example 3, SrTiO was used as Transformation 3 3 and LaSrMnO 3 laminated body made of Figure 23 The thermal switching element 1 shown.

[0184] Using Nb:SrTiO 3 As the base 22, the thin films shown below were deposited by laser ablation. The deposition is performed under an oxygen atmosphere of 10 mmTorr to 500 mmTorr while heating at 450°C to 700°C. Initially, SrTiO is configured on the substrate 22 3 (thickness 50nm), further configure LaSrMnO on it 3 (Thickness: 100 nm) as Transformer 3. Second, configure SrRuO on the transition body 3 3 (thickness 10nm). Next, the SrRuO 3 Pt (thickness 240nm) is arranged on it. The temperature during sputtering was 400°C. Next, if Figure 23 As shown for SrRuO 3 The laminated body of Pt and Pt is microfabricated to form electrode 2a and electrode 2b. Thereafter, as the insulator 9, Al was arranged so that the thickness from the surface of the electrode 2a and the electrode 2b was 80 nm. 2 o 3 , and finally, Au (th...

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Abstract

A heat switching device which has a completely different structure from those of conventional heat switching devices and is capable of controlling heat transfer through application of energy is disclosed. The heat switching device comprises a first electrode (2a), a second electrode (2b), and a transition body (3) arranged between the first electrode (2a) and the second electrode (2b). The transition body (3) contains a material which undergoes an electron phase transition when energy is applied. Consequently, the heat conductivity between the first electrode (2a) and the second electrode (2b) is changed by applying energy to the transition body (3).

Description

technical field [0001] The present invention relates to a thermal switching element capable of controlling heat transfer and a manufacturing method thereof. Background technique [0002] If there is a thermal switching element capable of controlling the transfer of heat, the above element can be applied to various fields. For example, a thermal switch element can also be applied to the field of cooling technology which is a technique of transferring heat in a specific direction, and in this case, the above-mentioned element can also be called a cooling element. [0003] Existing cooling technologies are broadly classified into two types, those using a compression and expansion cycle of a refrigerant, and those using a thermoelectric phenomenon. In the case of a compression / expansion cycle utilizing a refrigerant, a compressor is mainly used for compressing the refrigerant. This technology is also widely used in consumer equipment such as refrigerators, refrigerators, and a...

Claims

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Application Information

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IPC IPC(8): H01L37/00F25B21/00
CPCY02B30/66Y02B30/00
Inventor 小田川明弘杉田康成足立秀明出口正洋
Owner PANASONIC CORP
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