Semiconductor laser device and manufacturing method therefor
A technology of laser device and manufacturing method, which is applied to semiconductor lasers, laser parts, lasers, etc., can solve the problems of increasing the light absorption of Au diffusion region, deterioration of emission efficiency, deterioration of characteristics of laser devices, etc., to improve heat dissipation and prevent tilting. Effect
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no. 1 example
[0069] figure 1 is a schematic cross-sectional view of the semiconductor laser device according to the first embodiment of the present invention.
[0070] Semiconductor laser devices have n-(Al 0.7 Ga 0.3 ) 0.5 In 0.5 P first cladding layer 2, quantum well active layer 3, p-(Al 0.7 Ga 0.3 ) 0.5 In 0.5 P second cladding layer 4, and p-In 0.5 Ga 0.5 P etch stop layer 5, and these layers are stacked in this order on a substrate such as n-GaAs substrate 1. n-(Al 0.7 Ga 0.3 ) 0.5 In 0.5 P first cladding layer 2, quantum well active layer 3, p-(Al 0.7 Ga 0.3 ) 0.5 In 0.5 P second cladding layer 4, and p-In 0.5 Ga 0.5 The P etch stop layer 5 forms an example of a compound semiconductor layer.
[0071] The quantum well active layer 3 consists of two layers of In 0.5 Ga 0.5 P well layer, one layer (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P barrier layer, and two layers (Al 0.7 Ga 0.3 ) 0.5 In 0.5 The P waveguide layer is formed.
[0072] Set on the etch stop layer 5 ...
no. 2 example
[0097] image 3 is a schematic cross-sectional view of a semiconductor laser device according to a second embodiment of the present invention.
[0098] Semiconductor laser devices have n-(Al 0.7 Ga 0.3 ) 0.5 In 0.5 P first cladding layer 2, quantum well active layer 3, p-(Al 0.7 Ga 0.3 ) 0.5 In 0.5 P second cladding layer 4, and p-In 0.5 Ga 0.5 P etching stop layer 5, these layers are stacked in this order on n-GaAs substrate 1 as an example of the substrate. n-(Al 0.7 Ga 0.3 ) 0.5 In 0.5 P first cladding layer 2, quantum well active layer 3, p-(Al 0.7 Ga 0.3 ) 0.5 In 0.5 P second cladding layer 4, and p-In 0.5 Ga 0.5 The P etch stop layer 5 forms an example of a compound semiconductor layer.
[0099] The quantum well active layer 3 is composed of two layers of In 0.5 Ga 0.5 P well layer, one layer (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P barrier layer, and two layers sandwiching the well layer and the barrier layer (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P waveguide la...
no. 3 example
[0134] Figure 5 A schematic cross-sectional view of a semiconductor laser device according to a third embodiment of the present invention is shown. exist Figure 5 in, with image 3 The same components in the second embodiment shown are passed with the image 3 are represented by the same reference numerals, and their descriptions are omitted.
[0135] This semiconductor laser device differs from that of the second embodiment in that a plating electrode 35 of an Au plating film as an example is formed on a p-side electrode 31 .
[0136] The manufacture of the semiconductor laser device of this embodiment produces the same effects and advantages as those of the semiconductor laser device of the second embodiment. Also, since the plating electrode 35 is formed on the p-side electrode 31, good heat dissipation is obtained, enabling high temperature, high output operation with improved reliability.
[0137] Furthermore, instead of the dielectric film 21 having poor thermal c...
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