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Ceria abrasive for cmp

A chemical-mechanical and cerium-oxide technology, which is applied in the direction of polishing compositions containing abrasives, other chemical processes, chemical instruments and methods, etc., can solve problems such as the use and amount of chemical additives that are not specified in detail, and achieve highly selective effect

Active Publication Date: 2006-08-30
K C TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this publication, only basic characteristics such as selectivity and polishing speed are described, and the use and amount of chemical additives, the size distribution range of polishing particles, viscosity, the number of polishing particles with a size greater than 1 μm, etc. The performance required for the highly selective semiconductor STI CMP process such as is not specified in detail

Method used

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  • Ceria abrasive for cmp
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  • Ceria abrasive for cmp

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] 50 kg of synthetic high-purity ceria powder was mixed with 150 kg of high-purity water in a high-shear mixer. Subsequently, the mixture was ground in a high-energy mill to control its particle size, and dispersed by a high-pressure dispersion stabilizer. Next, polymethacrylamine (trade name: Darvan C, available from R.T. Vanderbilt Co.) as an anionic polymer was added in an amount of 1% by weight of the ceria powder. Then, after obtaining a 2% by weight ceria slurry by adding an additional 480 kg of high-purity water to the mixture and stirring, by mixing 2 kg of a 10% by weight ceria slurry with 8 kg of high-purity water 10 kg of 2% by weight ceria slurry was obtained to prepare a final slurry sample. That is, the concentration of abrasive particles was controlled to be 2% by weight.

[0050] Independently of the above steps, after mixing 0.3kg of polyacrylic acid (PAA) with 0.05kg of acrylamide and a very small amount of high-purity water and reacting them, it is ma...

Embodiment 2 to 10

[0053] Although the slurry produced in the same manner as in Example 1 was used in Examples 2 to 10, compounds described in Table 1 as chemical additives were mixed with the above slurry. The mixing ratio of the two is the same as in Example 1, which is also 1:1.

[0054] polymer molecule

Embodiment 11

[0088] In order to determine the impact of the concentration of chemical additives in the CMP abrasive of the present invention on the CMP process, the chemical additives used for low-density and high-density patterns were respectively used to calculate the polymerization of 3%, 5% and 10% by solvent weight. The addition of molecules and monomeric compounds to manufacture. The results of the polishing properties of the abrasives according to the respective chemical additives are shown in Table 4.

[0089] 10% by weight

5% by weight

3% by weight

low density pattern

chemical additives

oxide removal rate

(Angstrom / min)

2310

2780

3170

Nitride film removal rate

(Angstrom / min)

45

53

59

high density pattern

chemical additives

Oxide film removal rate

(Angstrom / min)

2010

2530

2800

Nitride film removal rate

(A...

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PUM

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Abstract

The present invention relates to a CMP abrasive comprising a ceria slurry and a chemical additive having two or more functional groups by mixing and synthesizing a polymeric molecule and a monomer . Also, the present invention relates to a method for a manufacturing CMP abrasive by providing a ceria slurry, manufacturing a chemical additive having two or more functional groups by mixing and synthesizing of the polymeric moleculeand the monomer in a reactor, and mixing said slurry and said chemical additive. Therefore, when the abrasive according to the present invention is used as an STI CMP abrasive, it is possible to apply the abrasive to the patterning process required in the very large scale integration semiconductor process. Furthermore, the CMP abrasive of the present invention has a superior removal rate, superior polishing selectivity, superior within wafer non-uniformity (WIWNU), and minimized occurrence of micro scratches.

Description

technical field [0001] The invention relates to an abrasive used in the chemical mechanical polishing (CMP) process of a multilayer metal wiring structure semiconductor element manufacturing process and a manufacturing method thereof. Specifically, the present invention relates to a kind of abrasive used in the chemical mechanical polishing process of Shallow Trench Isolation (STI, Shallow Trench Isolation) process and its manufacture method, and the chemical mechanical polishing process in the STI process is more than 256M Byte DRAM (design standard <0.13μm) is essential for the VLSI semiconductor manufacturing process. Background technique [0002] The local oxidation process of silicon (LOCOS) is a traditional semiconductor device isolation process, and the LOCOS process reaches the limit when the design standard is less than 0.25 μm. Therefore, a new type of STI process is introduced as an alternative technology to the LOCOS process. [0003] refer to Figure 7 (a) ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14C09G1/02H01L21/3105
CPCC09G1/02H01L21/31053C09K3/1463C09K3/14
Inventor 白云揆朴在勤金相均加藤健夫朴容国
Owner K C TECH
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