Data completeness protection method of flash storage

A technology of data integrity and flash memory, applied in static memory, memory system, read-only memory, etc., can solve the problems of adding backup battery, storage block data failure, abnormal power failure, etc., to improve safety reliability, safety Reliable storage and the effect of avoiding data loss

Active Publication Date: 2006-09-13
SHENZHEN SINOSUN TECH
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Problems solved by technology

However, this method has its disadvantages. Firstly, adding a backup battery not only increases the complexity of the hardware circuit design, but also increases the cost; secondly, the backup battery has a certain service life; In this case, abnormal power failure will still occur, making the data in the entire storage block invalid
[0004] Therefore, the security reliability of the data storage function in the prior art is relatively low

Method used

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  • Data completeness protection method of flash storage
  • Data completeness protection method of flash storage
  • Data completeness protection method of flash storage

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Embodiment Construction

[0018] Below in conjunction with accompanying drawing and in conjunction with embodiment the present invention is described in further detail:

[0019] The flash memory of the present invention is provided with a main storage area and a backup storage area, wherein the main storage area and the backup storage area respectively have one or more storage blocks, and the writing and erasing operations of flash memory data are performed according to the storage blocks.

[0020] The storage block data in the main storage area and the backup storage area pass the checksum verification of the detection data. If the checksum verification is correct, it is valid data; if the checksum verification fails, it is damaged data. The checksum is a value calculated for a piece of data, through which it can be checked whether the original data has changed, and this value is stored together with the original data.

[0021] figure 1 Shown is the new data record write operation process, specifical...

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Abstract

A method for protecting data completeness of flash storage includes calculating out calibration sum of data to be written in and storing data and said sum in blank region of write in storing zone then writing data with said sum in corresponding position in backup storing zone ( BSZ ), erasing off a block of data in main storing zone ( MSZ ) first and then erasing off a block of data in said position on BSZ, fetching and calibrating data of MSZ and fetching as well as calibrating data stored in said position on BSZ if data in MSZ is damaged, using effective data in BSZ to cover damaged data in MSZ.

Description

technical field [0001] The invention relates to data storage, in particular to a flash memory data integrity protection method. Background technique [0002] Flash memory is a high-density, low-cost, non-volatile, rewritable semiconductor memory. Its internal data storage area is divided into many storage blocks of the same size. The write operation to the flash memory must be in the blank The area where the area is located, the erasing operation must be performed according to the storage block, that is to say, if you want to write data again for an area that has already written data, you must first erase the block where this area is located, and then write the relevant data before writing entered successfully. Flash memory data record writing operation and erasing operation speed is relatively slow, and when it is performing erasing operation and writing operation, abnormal power failure may invalidate the data of the entire storage block. [0003] The usual solution is t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/00G06F12/16G11C16/02G11C16/06
Inventor 王振辉
Owner SHENZHEN SINOSUN TECH
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