Non-volatile memory possessing a plurality of capture film

Abstract

The present invention provides one kind of non-volatile memory, which includes tunnel insulating film formed on the semiconductor substrate, memory nodes formed on the tunnel insulating film, barrier insulating film formed on the memory nodes, and control grid formed on the barrier insulating film. The memory node includes at least two layers of capture film of different trap density, and the barrier insulating film possesses dielectric constant greater than that of silicon oxide film.

Description

technical field [0001] The present invention relates to nonvolatile memory devices and methods of fabricating such devices, and more particularly, to nonvolatile memory devices including storage nodes for storing charge and methods of fabricating memory devices including such storage nodes. Background technique [0002] During writing and erasing data, non-volatile memory devices may utilize one or more methods including, for example, modifying the threshold voltage transitions of transistors, shifting charge, and / or changing resistance. Those non-volatile memory devices that utilize this method of modifying threshold voltage transitions typically include storage nodes for storing charge and thus may be referred to as charge storing memory devices. Examples of the electricity storage memory device include a floating gate memory device using a floating gate as a storage node and a SONOS memory device using a charge trapping layer as a storage node. [0003] figure 1 is a cr...

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Problems solved by technology

Therefore, for including figure 1 It is difficult to improve programming and erasing efficiencies while improving or maintaining retention characteristics for semiconductor devices whose structure corresponds substantially to that of the illustrated device

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