Method and device for varying an active duty cycle of a wordline
A technology of working cycle and word line, applied in the direction of digital memory information, information storage, static memory, etc., can solve the problems of inaccurate edge and duration of WL_EN signal signal
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[0036] Therefore, this paper provides a new DRAM circuit and method that can perform "write-window" testing by changing the timing of automatic pre-charging in DRAM. Since the start of the auto-precharge cycle is timed by the internal operation of the DRAM circuit disclosed herein, it can be controlled more precisely and with greater granularity than the devices described in the Background of the Invention above.
[0037] now refer to Figure 3 to Figure 6 Embodiments of the present invention are described. image 3 A DRAM 200 according to an embodiment of the present invention is shown. Such as image 3 As shown, when the test mode operation of the DRAM 200 is enabled by the signal TM_EN, the chip's test mode interface 230 is used to receive data (TM_DATA). The test mode interface 230 is preferably not a dedicated interface, but can be used to receive and latch scan data for use in the different circuits of the chip, whatever their function and wherever they are located on t...
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