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Method and device for varying an active duty cycle of a wordline

A technology of working cycle and word line, applied in the direction of digital memory information, information storage, static memory, etc., can solve the problems of inaccurate edge and duration of WL_EN signal signal

Inactive Publication Date: 2006-09-27
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as becomes apparent from the following, there is the following problem: making the PCHG transform at the required time needs to face formidable difficulties
The transition time tT and the jitter tJ make the signal edge and duration of the WL_EN signal imprecise
However for the write-window test it is necessary to change the word line activation interval tW of 1 ns to the range of 20 to 30 ns, the large jitter and long transition time of the prior art device shown in Figure 1 precludes performing such a test

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  • Method and device for varying an active duty cycle of a wordline
  • Method and device for varying an active duty cycle of a wordline
  • Method and device for varying an active duty cycle of a wordline

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Embodiment Construction

[0036] Therefore, this paper provides a new DRAM circuit and method that can perform "write-window" testing by changing the timing of automatic pre-charging in DRAM. Since the start of the auto-precharge cycle is timed by the internal operation of the DRAM circuit disclosed herein, it can be controlled more precisely and with greater granularity than the devices described in the Background of the Invention above.

[0037] now refer to Figure 3 to Figure 6 Embodiments of the present invention are described. image 3 A DRAM 200 according to an embodiment of the present invention is shown. Such as image 3 As shown, when the test mode operation of the DRAM 200 is enabled by the signal TM_EN, the chip's test mode interface 230 is used to receive data (TM_DATA). The test mode interface 230 is preferably not a dedicated interface, but can be used to receive and latch scan data for use in the different circuits of the chip, whatever their function and wherever they are located on t...

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Abstract

A semiconductor memory is provided which is operable in at least a test mode. Such semiconductor memory includes a memory array, the memory array including a plurality of memory cells which are accessible through a plurality of respective wordlines and a plurality of respective bitlines. A row decoder driver is operable to activate one wordline of the plurality of wordlines at a first point in time that is determined in relation to a first signal and to deactivate the wordline at a second point in time that is determined in relation to a second signal. The semiconductor memory further includes a precharge circuit which is operable to precharge the bitline at a third point in time, the third point in time occurring no sooner than the second point in time. A variable length delay circuit is operable to output the second signal at a delayed timing after the first signal and delayed in relation to the first signal, the delayed timing having a controllably variable length.

Description

technical field [0001] The present invention relates to semiconductor integrated circuits and their testing. Background technique [0002] Production testing of semiconductor integrated circuits, also referred to herein as "chips", requires not only devices that cannot be reliably identified and processed but also devices that operate on the margins, ie devices whose operation is close to failure. Typically to avoid a later failure of the fringe device (which may then require more expensive repairs), the fringe device is taken off-line and replaced by a device that has tested good. Alternatively, an edge device may be allowed to retain a portion of the operating configuration provided the chip is properly labeled and confirms the device's marginality to downstream users who incorporate the edge chip into other equipment. In other words, some chips operate satisfactorily under certain limited conditions, such as in less frequent use, for shorter durations, for shorter on-tim...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/00
CPCG11C11/401G11C29/50G11C8/08G11C2029/1202G11C29/12015
Inventor K·尼尔勒
Owner INFINEON TECH AG
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