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Plasma processing device

A plasma and treatment method technology, applied in the field of plasma treatment devices, can solve the problems of shortened life, damage to the upper electrode, etc., and achieve the effect of preventing abnormal discharge

Active Publication Date: 2011-10-12
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in the prior art parallel plate type plasma processing apparatus, arc discharge may occur in the hole of the gas shower head of the upper electrode due to the discharge condition, thereby shortening the life due to damage of the upper electrode.

Method used

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Embodiment Construction

[0031] (Structure of plasma processing apparatus)

[0032] Such as figure 1 As shown, the plasma processing apparatus 10 of the present invention is composed of a conductive and airtight processing container 11 (the width of the inside of the processing container is 2890 mm, the length is 3100 mm, and the height is 600 mm). Processing chamber 12. Then, in the processing chamber 12, a conductive lower electrode 14 serving also as a stage for carrying a processed substrate G (for example, an outer shape of 1870 mm) in a rectangular shape in plan view, such as a glass substrate to be carried in and out, is provided. ×2200mm glass substrate) and grounded. Further, at a position facing the substrate supporting surface of the lower electrode 14, the upper electrode 13 is provided parallel to the lower electrode 14, and the upper electrode 13 passes through a matching unit (first matching unit) 16 for 13.56 MHz and a matching unit (second matching unit) for 3.2 MHz. Two matchers)...

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Abstract

The present invention provides a plasma processing apparatus for suppressing arc discharge by preventing the plasma entrance into the gas hole of a showerhead even in case of applying a first high frequency electric power, by generating a sheath firstly with a second high frequency electric power, by adding the second high frequency electric power of 300 W to 1,000 W lower than the first frequency electric power, then adding the first frequency electric power to an upper electrode, with a time delay for 1 to 3 seconds. The plasma processing apparatus 10 is provided with an upper electrode 13 and a lower electrode 14 facing oppositely in a processing chamber 12. The second high frequency electric power is applied first to the upper electrode 13, and then with a time delay for 1 to 3 seconds after that, the first high frequency electric power is superimposed and applied.

Description

technical field [0001] The invention relates to a plasma processing device for etching a substrate to be processed, in particular to a parallel plate type plasma processing device. Background technique [0002] In manufacturing processes of semiconductor devices and flat panel displays (FPDs), parallel plate plasma processing apparatuses are used to etch substrates such as semiconductor wafers and glass substrates (LCD substrates). [0003] Such as Figure 5 As shown, this parallel plate type plasma processing apparatus is formed with a processing chamber 102 of an etching device 100 in a conductive airtight processing container 104 (the inner dimensions of the processing container have a width of 2890 mm, a length of 3100 mm, and a height of 600 mm). Furthermore, in the processing chamber 102, an upper electrode (first electrode) 106 and a lower electrode (second electrode) 108 having a gas shower head are provided facing each other. In addition, the lower electrode 108 do...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F4/04H05H1/24
CPCB60H1/00985B60R11/0235B60R16/0231H01H25/041
Inventor 佐藤亮南雅人
Owner TOKYO ELECTRON LTD