Method for producing semiconductor imaging sensor by organic coating

Abstract

The process provided for fabricating semiconductor image sensor using an organic coating comprises: an anti-reflection property of said organic coating at top surface and bottom surface is used to reduce the intensity of reflected light on a substrate so as to reduce the residues of substrate film generated by cross bounding of negative photoresist containing filter material due to parasitic light; meanwhile a surface developing activator contained in said organic coating is used to optimize the developing art and to reduce the residues of film on the top.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit technology, and in particular relates to a method for manufacturing a semiconductor image sensor by using an organic coating. Background technique [0002] With the continuous improvement of integrated circuit manufacturing technology, the volume of semiconductor devices is becoming smaller and smaller. At the same time, ultra-large-scale or even ultra-large-scale chips, high integration and densification make it possible to realize multi-functions on a single chip. The current semiconductor industry is developing towards diversification, multi-function and continuous development. Semiconductor image sensor is one of the trends. The semiconductor image sensor is mainly composed of a microscopic fly eye lens, a color filter layer, a photosensitive photodiode or a complementary metal oxide semiconductor device and an image processor. The basic principle is to use the filter characterist...

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Problems solved by technology

However, the use of negative photoresist will be accompanied by some side effects and adverse reactions, such as photoresist bottom plate residue, photoresist surface residue, photoresist swelling after development, photoresist pattern outline slightly deformed, etc.

Among them, the photoresist bottom plate residue and surface residue are particularly fatal. The photoresist residue on the substrate is caused by the reflected light on the ground, which causes the negative photoresist to be exposed to cross-linking reactions in unnecessary areas, resulting in bottom film residue. Causes too much noise and affects the performance of color pixels; the photoresist residue on the surface of the filter layer is mainly from the lack of development. Due to the hydrophobic nature of the photoresist, the water-soluble developer is affected by the surface tension. It cannot cover the surface of the silicon wafer quickly, relatively well, and evenly, resulting in poor development and ultimately bad results

The residual film will affect the transmission efficiency of the filter layer and the accuracy of the filter layer, which can cause image distortion, color drift and other adverse reactions

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