Method for cleaning semiconductor wafer

Abstract

This invention provides semiconductor wafer washing method. The procedures are that 1) rotating wafer, and points on it rotate as speed more than zero. 2) The washing liquor is transferred to wafer surface. 3) The wafer surface is washed. 4) The washing liquor is removed from the wafer surface. Everywhere on the wafer surface is washed through this method, so the residual and particles rest on the wafer surface are effectively removed, blemish on the wafer is eliminated, and percent defective of the wafer is reduced.

Description

technical field [0001] The invention relates to a cleaning method of a semiconductor wafer, in particular to a novel cleaning method for solving unclean cleaning at the center of the wafer. Background technique [0002] It is well known that during the manufacturing process of semiconductor wafers, such as plasma etching, some residual substances and particles are inevitably left on the surface of the wafer, and these impurities can easily cause irregularities between metallization features during continuous manufacturing operations. Blemishes such as proper interactions. In some cases, such defects may cause devices on the wafer to become inoperable, resulting in increased wafer defectivity and costly waste. Therefore, appropriate and effective cleaning wafers. [0003] After the etching process, there are currently two types of wet cleaning tools for cleaning wafers, one is a batch processing mode, and the other is a single wafer processing mode. In the single wafer pro...

AI Technical Summary

Problems solved by technology

Nozzles (not shown) spray the cleaning solution onto the wafer surface, and the cleaning is completed by the rotation of the wafer 501, but since the wafer 501 is around its center point O 501 (that is, where the axis of the drive motor is) rotates, such as image 3 As shown, the points on the outer circumference of the wafer 501 (such as A 501 point) has the highest rotational speed, and the center point O 501 The rotational speed at is always zero, so if the center point O of the wafer 501 501 If there are residual substances, it will be difficult to clean, and the expected cleaning effect cannot be achieved, so that the final rejection rate of the wafer is still very high

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