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Semiconductor memory

一种存储器、半导体的技术，应用在静态存储器、数字存储器信息、信息存储等方向，能够解决振荡器电路设计振荡器测试复杂等问题，达到功耗增大量小、防止数据丢失的效果

Inactive Publication Date: 2006-12-20
SOCIONEXT INC
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Problems solved by technology

This therefore complicates both the circuit design of the oscillator and the testing of the oscillator

Method used

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  • Semiconductor memory
  • Semiconductor memory
  • Semiconductor memory

Examples

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Embodiment Construction

[0030]Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawing, the signal line indicated by the thick line includes a plurality of bits. The double circles in the drawings indicate external terminals. A part of the block to which the thick line is connected includes a plurality of circuits. To indicate the signal line to which the signal is sent, a symbol equal to the signal name is used. The signal with " / " at the head indicates negative logic. The signal with "Z" at the end indicates positive logic.

[0031] figure 1 An embodiment of the semiconductor memory of the present invention is shown. The semiconductor memory is formed using CMOS technology and includes FCRAM (Fast Cycle RAM) with a DRAM memory cell (dynamic memory cell) and an SRAM interface. An FCRAM with an SRAM interface is a pseudo-SRAM that periodically performs a refresh operation in the chip without receiving a refresh command from the outside, and save...

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Abstract

An oscillator generates a refresh request signal periodically. A storing circuit changes a stored value by a predetermined value in response to the refresh request signal and returns the stored value by one in response to a refresh operation. A store control circuit, when a state detecting circuit detects a change of an operational state of a semiconductor memory, increases or decreases the predetermined value which the storing circuit uses. A refresh decision circuit outputs refresh signals of a number corresponding to the stored value until the stored value returns to an initial value. This makes it possible to change the frequency of the refresh operations according to a change of the operational state without changing an oscillation cycle of the oscillator. Without unnecessary oscillation of the oscillator, it is possible to decrease a standby current of the semiconductor memory.

Description

Technical field [0001] The present invention relates to a semiconductor memory that requires periodic refresh operations to maintain data written in dynamic memory cells. More specifically, the present invention relates to a semiconductor memory that automatically performs a refresh operation internally without a refresh command from the outside. Background technique [0002] In pseudo SRAMs with dynamic memory cells and DRAMs with self-refresh modes, it is necessary to periodically refresh the memory cells using internal circuits to maintain data written in the memory cells. Specifically, this type of semiconductor memory incorporates a refresh timer that generates a refresh request signal for performing a refresh operation. Generally speaking, the refresh timer includes an oscillator that generates an oscillation signal, and a frequency divider that periodically generates a refresh request signal by dividing the frequency of the oscillation signal. [0003] The frequency of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/401G11C11/406
CPCG11C2211/4061G11C2211/4067G11C11/406G11C11/40603G11C11/40626G11C11/408
Inventor 奥山好明
Owner SOCIONEXT INC
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