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Method for manufacturing thin film transistor substrate

A technology for substrates and insulating substrates, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical solid-state devices, etc., can solve the problem of incomplete removal of particles, achieve the effect of reducing openings and improving step coverage

Inactive Publication Date: 2007-01-24
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, traditional cleaning processes have the problem of not being able to completely remove particles

Method used

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  • Method for manufacturing thin film transistor substrate
  • Method for manufacturing thin film transistor substrate
  • Method for manufacturing thin film transistor substrate

Examples

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Embodiment Construction

[0045] The present invention will be described more fully hereinafter with reference to the accompanying drawings that illustrate embodiments of the invention. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Throughout, like reference numbers refer to like elements.

[0046] It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present therebetween. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0047] It can be under...

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Abstract

A method for manufacturing a TFT substrate includes forming a gate metal layer on an insulating substrate, forming a photo-sensitive layer pattern on the gate metal layer, forming a gate wiring by etching the gate metal layer using the photo-sensitive layer pattern, exposing the gate wiring by stripping the photo-sensitive layer pattern, and washing exposed gate wiring with a washing agent containing nitric acid. Thus, the present invention provides a method for manufacturing a TFT substrate to improve the quality of the thin metal layer by removing particles effectively.

Description

[0001] This application claims priority to and all benefit of Korean Patent Application No. 2005-0065841 filed Jul. 20, 2005 under 35 U.S.C. §119, the contents of which are incorporated herein by reference. technical field [0002] The present invention relates to a method of manufacturing a thin film transistor ("TFT") substrate, and more particularly, to a method of manufacturing a TFT substrate using an improved cleaning process for cleaning metal wiring in the TFT substrate. Background technique [0003] A liquid crystal display ("LCD") device includes an LCD panel into which liquid crystal is injected between a TFT substrate and a color filter substrate. Because the LCD panel is a non-luminous element, a backlight unit for providing light is placed on the back of the TFT substrate. For light irradiated from the backlight unit, the amount of transmitted light of the LCD panel is adjusted by the alignment state of liquid crystals, which can be changed by an electric field...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/84H01L21/768
CPCH01L27/1214H01L27/124G02F1/136286H01L21/02063H01L21/02068
Inventor 文东元林得洙崔渊琇崔浩根
Owner SAMSUNG ELECTRONICS CO LTD
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