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Method for improving ultrathin plasma silicon oxy nitride electrical test accurancy

A plasma and electrical testing technology, applied in semiconductor/solid-state device testing/measurement, etc., can solve problems such as EOT data inconsistency, measurement time impact, etc., to achieve the effect of improving efficiency and shortening time

Inactive Publication Date: 2007-03-28
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In Figure 1, the breakdown voltage value should be higher at lower DPN power, but the actual curve is not linear because of the influence of measurement time, and the EOT data will also be less consistent, which is very affected by the measurement time influences

Method used

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  • Method for improving ultrathin plasma silicon oxy nitride electrical test accurancy
  • Method for improving ultrathin plasma silicon oxy nitride electrical test accurancy

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Embodiment Construction

[0021] In order to better understand the content of the present invention, the present invention will be further described below with reference to the embodiments, but these embodiments do not limit the present invention.

[0022] During the interval between obtaining the plasma nitride oxide sample and waiting for the measurement, that is, before the formal measurement, firstly deposit the opposite charge on the surface of the sample, and wait for a period of time to allow the deposited charge to penetrate into the oxide. and other charge neutralization in the film. The sample can then be tested for corona charge using, for example, the Q-V method, without subjecting the test results to excess unstable charge within the sample.

[0023] Wherein, the opposite charge can be deposited by ionizing an inert gas such as argon, so that it has a charge opposite to the charge in the oxide film of the test sample, and the surface of the test sample is fully covered on the surface of th...

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Abstract

In technique of semiconductor device manufacture, measurement of equivalent oxide thickness (EOT), and voltage of soft breakdown is a very important key for oxide of gate in 90 Nano manufacturing procedure. When conventional quasi C-V method is applied to azotized oxide, there are lots of noises caused by unstable charges in oxide. Especially, it is takes long time for positive charges brought from nitridation of plasma to be discharged and stabilized. Otherwise, unstable state of charges makes measured result contain lots of noises. Usually, it needs to take round the day to make charges stable before formal measurement. The disclosed method makes charges in testing sample stable rapidly, and prevents issue of noise.

Description

technical field [0001] The present invention relates to a method for improving the electrical property testing accuracy of ultra-thin plasma silicon oxynitride, in particular to a testing method which can avoid the noise generated by the measured data due to the charge left by the plasma nitridation process in the oxide. . Background technique [0002] In the semiconductor manufacturing process, the measurement of the equivalent oxide thickness EOT (Equivalent Oxide Thickness) and the soft breakdown voltage is very critical for the gate oxide of the 90 nm process. Conventional oxides or thick oxides can be easily measured by quasi-C-V methods, such as corona charge deposition on the surface of silicon wafers. But this Q-V measurement of corona charge is noisy when applied to plasma nitrided oxides because the charge in the oxide is unstable, diffuses out and is lost over time. In particular, the positive charge integrated by plasma nitridation will take a long time to disc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 郭佳衢
Owner SEMICON MFG INT (SHANGHAI) CORP
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