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Semiconductor structure of high voltage side driver and its producing method

A technology of semiconductors and drivers, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as multiple costs

Inactive Publication Date: 2007-04-11
SYST GEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] 1. It is necessary to use more chip space to separate the high-voltage junction 110 and the high-voltage capacitor structure 120 on the P-type substrate 100
[0006] 2. It is necessary to use additional connecting metal 130 to connect the high-voltage junction 110 and the high-voltage capacitor structure 120, so the production of the high-voltage side driver requires more cost

Method used

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  • Semiconductor structure of high voltage side driver and its producing method
  • Semiconductor structure of high voltage side driver and its producing method
  • Semiconductor structure of high voltage side driver and its producing method

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Embodiment Construction

[0052] Please refer to FIG. 2A and FIG. 2B, which show a top view and a partial cross-sectional view (along the cross-section line A-A') of a semiconductor structure of a high-side driver in a power supply IC according to a preferred embodiment of the present invention. As shown in FIG. 2B , the semiconductor structure of the high voltage side driver includes an ion-doped junction (high voltage junction) 200 , an oxide layer 210 , a first dielectric layer 220 and a conductive capacitor structure 230 . The oxide layer 210 is formed on the ion-doped junction 200 , the first dielectric layer 220 is formed on the oxide layer 210 , and the conductive capacitor structure 230 is formed on the first dielectric layer 220 .

[0053] The ion-doped junction 200 includes a substrate 202 and a deep well 204 formed in the substrate 202 . The deep well 204 has a first concave structure C1 , such as the L-shaped corner structure shown in FIG. 2A . The ion doped junction 200 further includes a...

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Abstract

This invention discloses a semiconductor structure of a high voltage side driver including an ionic doped junction, in which, the ionic doped junction includes a substrate and a deep trap formed in the substrate and having a first concave structure, and also includes a semiconductor region connecting to the first concave structure of said deep trap having the same ionic dope density with the substrate virtually to increase the break-over voltage of the high voltage junction of the concave region adjacent to the capacitor structure so as to reduce the chip area and the cost for manufacturing high voltage side driver.

Description

technical field [0001] The invention relates to a semiconductor, in particular to a semiconductor structure of a high-voltage side driver and a manufacturing method thereof. Background technique [0002] For the high-side driver, basically, covering the high-voltage junction (HV junction) with an excessively large conductive material will reduce the breakdown voltage of the high-voltage junction. As shown in FIG. 1A, especially when a concave conductive capacitor structure 113 is directly arranged on the N-type deep well (NWD) 111 of the high-voltage junction 101, the P-type well region of the high-voltage junction 101 close to the concave (or corner) region The breakdown voltage (breakdown voltage) of (PW)S will be greatly reduced. [0003] Please refer to FIG. 1B , which shows a partial cross-sectional view of a semiconductor structure of a high-side driver in a conventional power supply IC. The semiconductor structure of the high-side driver includes a high-voltage junc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L21/822
Inventor 蒋秋志黄志丰
Owner SYST GEN