Method for forming feature definitions

Abstract

Methods are provided for processing a substrate by depositing a negative mask material on a surface of the substrate, etching the negative mask material to the substrate surface to form negative mask feature definitions, depositing an etch resistant material in the negative mask feature definitions, polish the etch resistant material to expose the negative mask materials, and etching the negative mask material to form feature definitions in the etch resistant material.

Description

technical field [0001] The present invention relates to the fabrication of integrated circuits and to methods for forming feature definitions on substrate surfaces. Background technique [0002] Since semiconductor devices were first introduced decades ago, the dimensions of such semiconductor device geometries have decreased enormously. Since then, integrated circuits have generally followed the two-year / half-size rule (commonly known as Moore's Law), which means that the number of devices mounted on a chip doubles every two years. Today's fabrication equipment routinely fabricates devices with 0.35 μm or even 0.18 μm feature sizes, and next generation equipment will fabricate devices with even smaller feature sizes. Furthermore, as feature sizes become smaller, the aspect ratio, or the ratio between the depth of a feature and the width of a feature, continues to increase, such that manufacturing processes are now required to deposit materials Among features with large as...

AI Technical Summary

Problems solved by technology

However, current hardmask materials may not have the selectivity to form features with aspect ratios of 100:1 or greater

In addition, the pattern transferred from the resist material to the hardmask to the dielectric material may be misprinted, resulting in undesired feature definition

Furthermore, the use of a hard mask increases production time and cost because additional steps are required for feature formation

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