Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products

A technology of composition and patterning, applied in the direction of cleaning methods using liquids, chemical instruments and methods, cleaning methods and utensils, etc., which can solve problems such as lithographic resist collapse, image loss, and poor image effects

Inactive Publication Date: 2007-05-09
ADVANCED TECH MATERIALS INC
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These conventional drying methods do not work well for images with critical dimension widths < 100nm and aspect ratios greater than 1
At this feature size, the surface tension of isopropanol or hexane pulls the image together, causing lithographic resist collapse and patterned image loss, or polymeric resist degradation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
  • Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
  • Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The present invention is based on the use of a supercritical fluid (SCF) as a cleaning medium for drying patterned wafers in a number of ways that avoid the problems inherent in the use of supercritical fluids.

[0016] Although supercritical fluids may first be considered as potentially useful media for drying patterned wafers because of their high diffusivity, low viscosity, near-zero surface tension, and excellent permeability, supercritical fluids such as supercritical CO 2 (SCCO2) is non-polar and thus cannot be used to dry patterned wafers. For example, water in supercritical CO 2 Solubility in less than 0.1% (weight), making supercritical CO 2 Not suitable for removing residual water from patterned wafers.

[0017] The present invention overcomes the problems that arise when supercritical fluids are used as drying media.

[0018] Although the invention is described hereinafter with particular use of CO 2 As an exemplary supercritical fluid material, it should...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

Description

technical field [0001] The present invention relates to compositions and methods for drying patterned wafers during the manufacture of integrated circuit products. Background technique [0002] During the manufacture of integrated circuit (IC) products, residual liquids, such as water, alcohol, etc., must be completely removed from the patterned wafer by a drying operation. However, when the critical dimension is less than about 100 nanometers (nm), it is difficult to remove residual water from patterned wafers with high aspect ratio trenches and channels without causing collapse of the lithographic patterned features. [0003] For example, during the development of exposed lithographic resists, it is common to dry patterned images with hexane and nitrogen, or with isopropanol and nitrogen. These conventional drying methods do not work well for images with critical dimension widths <100 nm and aspect ratios greater than 1. At this feature size, the surface tension of is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/00B08B3/02B08B3/10B08B7/00
CPCB08B7/0021
Inventor 许从应迈克尔·克赞斯基托马斯·H·鲍姆亚历山大·博罗维克埃利奥多·G·根丘
Owner ADVANCED TECH MATERIALS INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap