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Semiconductor metal capacitor

A metal capacitor and semiconductor technology, applied in the field of capacitors, can solve problems such as single dielectric material

Inactive Publication Date: 2007-06-13
SHANGHAI HUA HONG NEC ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This structure greatly improves the unit capacitance density of the capacitor, but because the dielectric material used in the dielectric layer is still single, it is still greatly affected by the voltage dependence

Method used

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  • Semiconductor metal capacitor
  • Semiconductor metal capacitor
  • Semiconductor metal capacitor

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Embodiment Construction

[0014] It can be seen from Figure 2 that the voltage dependence of different materials is different. However, in Figure 2, although the voltage dependence of silicon dioxide and silicon nitride is different, their characteristics are just the opposite and have complementary characteristics.

[0015] Fig. 3 shows that the present invention is used for the structural representation of single-layer filling dielectric layer IMD, comprises two output electrodes 31 and 32, upper metal plate 33, middle metal plate 34, lower metal plate 35, two layers of dielectric layers and filling material, the filling material constitutes the filling medium layer IMD, and the capacitor is a stacked structure, which consists of a lower metal plate 35, a dielectric layer 36, an intermediate metal plate 34, another dielectric layer 37 and an upper metal plate from bottom to top. 33, the middle metal plate 34 is connected to an output electrode 31 by a metal through hole 38 that passes through the fil...

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Abstract

The semiconductor metal capacitance possesses multi dielectric layer. Each dielectric layer uses not identical dielectric material so as to reduce influence of dependence on capacitance from voltage in order to meet requirements in each special situation.

Description

technical field [0001] The invention relates to a capacitor, especially a metal capacitor used for semiconductor devices. Background technique [0002] In the current CMOS / Bi CMOS integrated circuit technology, the MiM (Metal Insulator Metal) metal capacitor structure has been widely used. Its structure is shown in Figure 1. The device uses the Metal (metal layer) used for wiring as the lower plate 11, and adds a layer of metal 12 as another plate in the Metal interlayer dielectric, and the capacitor insulation in the middle The medium 13 is used to form a metal capacitor, and the two plates are respectively connected to the two output electrodes 15 by two through holes 14 filled with metal material passing through the filling medium IMD. Among them, the dielectric material of the capacitor generally uses SiN x or SiO 2 One of them, but no matter what kind of material has a certain voltage dependence (the characteristic capacitance will change with different voltage bias)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L27/102H01L27/10H01L27/00H01L29/92H01L23/52H10B12/00
Inventor 徐向明姚泽强
Owner SHANGHAI HUA HONG NEC ELECTRONICS