The invention discloses a preparation method of an electronic device with artificial synapsis at two ends based on organic/inorganic hybrid perovskite, and belongs to the field of the electronic device. The preparation method comprises the following steps: pre-treating a high-doped silicon substrate, spinning-coating a configured perovskite solution on a substrate, performing annealing treatment to obtain a perovskite thin film with good crystallinity; and then evaporating a metal top electrode to obtain the electronic device with perovskite artificial synapsis at two ends. Since the top electrode simulates the biological synapsis cephacoria, a perovskite active layer simulates the synaptic cleft, and a bottom electrode simulates synapsis caudacoria, the perovskite artificial synapsis hascomparatively high sensitivity (100mA), and the dual-pulse facilitation, the peak voltage dependence plasticity, peak persistent dependence plasticity and peak frequency dependence plasticity are realized. The preparation method disclosed by the invention not only can effectively simplify the basic structures of the perovskite artificial synapsis at two ends, the sensitivity is improved, the energy consumption is reduced, and the preparation method has significance for the development of the neuromorphic engineering and the human-like robot.