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Preparation method of electronic device with artificial synapsis at two ends based on organic/inorganic hybrid perovskite

An electronic device, perovskite technology, applied in the field of artificial synapse electronic devices at both ends, can solve the problem of low sensitivity of artificial synapse, achieve high sensitivity, simplify the process flow, and low energy consumption

Active Publication Date: 2019-06-21
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the sensitivity of artificial synapses is generally low at present, and at the same time reduce device energy consumption, save energy, and facilitate future large-scale integration

Method used

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  • Preparation method of electronic device with artificial synapsis at two ends based on organic/inorganic hybrid perovskite
  • Preparation method of electronic device with artificial synapsis at two ends based on organic/inorganic hybrid perovskite
  • Preparation method of electronic device with artificial synapsis at two ends based on organic/inorganic hybrid perovskite

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) 1.5×1.5cm 2 The highly doped silicon substrate was placed in acetone solution for ultrasonic cleaning for 15min, then placed in isopropanol (IPA) solution for ultrasonic cleaning for 15min, then IPA was heated to boiling, and the surface of the substrate was fumigated with IPA hot steam, then use N 2 The gun blows the surface dry.

[0026] (2) lead bromide (PbBr) with a molar ratio of 1:1 2 ) and methyl amine chloride (MACl) were mixed and dissolved in a 4:1 volume ratio of dimethylformamide (DMF): dimethyl sulfoxide (DMSO) mixed solvent, and then the mixture was placed in a magnetic stirrer Stir until it is clear and transparent, and configure it into MAPbClBr with a mass fraction of 20%. 2 Perovskite solution.

[0027] (3) The obtained silicon substrate was placed in a UV-ozone cleaning machine for 20 min, and 50 μL of perovskite solution was taken on the obtained silicon substrate with a pipette, firstly at 1000 r·min -1 Spin coating at the speed of 10s, fol...

Embodiment 2

[0031] (1) 1.5×1.5cm 2 The highly doped silicon substrate was placed in acetone solution for ultrasonic cleaning for 15min, then placed in isopropanol (IPA) solution for ultrasonic cleaning for 15min, then IPA was heated to boiling, and the surface of the substrate was fumigated with IPA hot steam, then use N 2 The gun blows the surface dry.

[0032] (2) lead bromide (PbBr) with a molar ratio of 1.1:1 2 ) and methylamine bromide (MABr) and dissolved in a 5:2 volume ratio of dimethylformamide (DMF): dimethyl sulfoxide (DMSO) mixed solvent, and then the mixture was placed in a magnetic stirrer Stir until it is clear and transparent, and configure it into MAPbBr with a mass fraction of 20%. 3 Perovskite solution.

[0033] (3) The obtained silicon substrate was placed in an ultraviolet-ozone cleaning machine for 20 min, and 50 μL of the perovskite solution was taken on the obtained silicon substrate with a pipette, and the temperature was 800 r·min at first. -1Spin coating at...

Embodiment 3

[0037] (1) 1.5×1.5cm 2 The highly doped silicon substrate was placed in acetone solution for ultrasonic cleaning for 15min, then placed in isopropanol (IPA) solution for ultrasonic cleaning for 15min, then IPA was heated to boiling, and the surface of the substrate was fumigated with IPA hot steam, then use N 2 The gun blows the surface dry.

[0038] (2) lead bromide (PbBr) with a molar ratio of 1:1 2 ) and methyl amine chloride (MACl) were mixed and dissolved in a 4:1 volume ratio of dimethylformamide (DMF): dimethyl sulfoxide (DMSO) mixed solvent, and then the mixture was placed in a magnetic stirrer Stir until it is clear and transparent, and configure it into MAPbClBr with a mass fraction of 10%. 2 Perovskite solution.

[0039] (3) The obtained silicon substrate was placed in an ultraviolet-ozone cleaning machine for 20 min, and 70 μL of perovskite solution was taken with a pipette on the obtained silicon substrate, and the temperature was 1000 r·min at first. -1 Spin...

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Abstract

The invention discloses a preparation method of an electronic device with artificial synapsis at two ends based on organic / inorganic hybrid perovskite, and belongs to the field of the electronic device. The preparation method comprises the following steps: pre-treating a high-doped silicon substrate, spinning-coating a configured perovskite solution on a substrate, performing annealing treatment to obtain a perovskite thin film with good crystallinity; and then evaporating a metal top electrode to obtain the electronic device with perovskite artificial synapsis at two ends. Since the top electrode simulates the biological synapsis cephacoria, a perovskite active layer simulates the synaptic cleft, and a bottom electrode simulates synapsis caudacoria, the perovskite artificial synapsis hascomparatively high sensitivity (100mA), and the dual-pulse facilitation, the peak voltage dependence plasticity, peak persistent dependence plasticity and peak frequency dependence plasticity are realized. The preparation method disclosed by the invention not only can effectively simplify the basic structures of the perovskite artificial synapsis at two ends, the sensitivity is improved, the energy consumption is reduced, and the preparation method has significance for the development of the neuromorphic engineering and the human-like robot.

Description

technical field [0001] The invention belongs to the field of electronic devices, in particular to an electronic device with artificial synapses at both ends. Background technique [0002] With the advent of the era of artificial intelligence, Neuromorphic Engineering, which simulates the structure, function and computing principles of the human brain, has developed rapidly. By simulating the complex functions of the human brain, such as memory, calculation, and cognition, this artificial neuromorphic system can achieve extremely high computing speed and efficiency, and is expected to break through many limitations of traditional computer chips. Although the computing power of modern computers continues to improve with the development of electronics and information technology, their functionality is still not comparable to that of the real human brain. The human brain occupies a volume of less than 2 liters and consumes only the same amount of energy as a household light bul...

Claims

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Application Information

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IPC IPC(8): H01L51/40B82Y10/00B82Y15/00
Inventor 徐文涛于海洋龚江东
Owner NANKAI UNIV
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