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Semiconductive polyimide film and process for production thereof

A polyimide film, semi-conductive technology, applied in the direction of coating, etc., can solve the problems of no drop in volume resistance value, small voltage dependence, difficulty in improving elongation and mechanical properties, etc., and the accuracy is easy to control, Good accuracy and small measurement voltage dependence

Inactive Publication Date: 2007-03-28
KANEKA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, in the above-mentioned fourth method, since the conductive film is only formed on the surface of the substrate, there is a problem that the volume resistance value does not decrease.
[0012] Therefore, using the above-mentioned various methods, the surface resistance and volume resistance of the polyimide film can be controlled more accurately, and the voltage dependence of the resistance value is small, but it is difficult to improve its elongation and mechanical properties.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0200] In the DMF solution 100g of polyamic acid 18.5% by weight synthesized with pyromellitic dianhydride and 4,4'-diaminodiphenyl ether 1: 1 molar ratio, add is made of acicular titanium oxide filler (fiber length 5.155 μm , fiber diameter 0.27 μm; manufactured by Ishihara Sangyo Co., Ltd., product number FTL-300, powder resistance 10 8 Ω cm) 6.4 g and DMF 28 g were mixed.

[0201] Then, a curing agent composed of 9 g of acetic anhydride, 11.4 g of isoquinoline, and 15.6 g of DMF was mixed with the polyamic acid varnish in which the filler was dispersed, and stirred. After defoaming by centrifugation, the mixture was cast-coated on aluminum foil. From stirring to defoaming, while cooling to below 0°C.

[0202] The laminate of the aluminum foil and the polyamic acid solution was heated at 140° C. for 250 seconds to obtain a self-supporting gel film. The gel film was peeled off from the aluminum foil and fixed on the frame.

[0203] This gel film was heated at 200° C., 300...

Embodiment 2

[0205] In addition to the use of acicular titanium oxide filler (the above FTL-300, powder resistance 10 8 Ω·cm) except that 9.6 g, the same operation as in Example 1 was carried out to obtain a semiconductive polyimide film (filler content: 37.5% by weight) having a thickness of 75 μm. Table 1 shows various physical properties of the semiconductive polyimide film.

[0206] Reference example

[0207] A polyimide film with a thickness of 75 μm was obtained in the same manner as in Example 1 except that the slurry composed of titanium oxide and DMF was not used. Various physical properties of this polyimide film are shown in Table 1.

Embodiment 3

[0224] In addition to the use of acicular titanium oxide filler (the above FTL-300, powder resistance 10 8 Ω·cm) except for 4.8 g, the same operation as in Example 1 was carried out to obtain a gel film. The volatile content of the gel film was 43%.

[0225] This gel film was peeled off from the aluminum foil, immersed in the coating solution for forming an ITO film obtained in the preparation example, and was fixed to a frame after removing excess liquid droplets with a squeeze roll.

[0226] This gel film was heated at 200° C., 300° C., 400° C., and 450° C. for 1 minute each to form a semiconductive polyimide film (filler content: 28.6% by weight) having a thickness of 75 μm. Various physical properties of this semiconductive polyimide film are shown in Table 2.

[0227] In addition, in this example, the imidization rate of the gel film obtained without adding the inorganic filler was 92%.

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Abstract

A polyamic acid solution and / or a polyamic acid gel film is subjected to at least one treatment selected from among addition of a semiconductive inorganic filler, addition of an electroconductivity-imparting agent, and formation of a conducting film; and then the polyamic acid contained in the resulting solution or film is subjected to imidation. The semiconductive polyimide film thus produced is well controlled in surface resistance and volume resistance with reduction in the voltage dependences of both resistances, has excellent mechanical characteristics, and realizes a high elongation.

Description

[0001] This application is a divisional application of the Chinese invention application (name of invention: semiconductive polyimide film and its manufacturing method, filing date: June 14, 2002; application number 02812040.X). technical field [0002] The present invention relates to a semiconductive polyimide film suitable for use in battery electrode materials, electromagnetic shielding materials, electrostatic adsorption films, antistatic agents, image forming device components, electronic devices, and the like, and a method for producing the same. Background technique [0003] Conventionally, as a method of improving the conductivity of a polyimide film, a method of mixing a conductive filler into polyimide is known (for convenience of description, it will be referred to as a first method). The so-called conductive fillers generally refer to substances that coat various base materials with conductive substances such as carbon, graphite, metal particles, indium tin oxide...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08J7/04C08L79/08C08K3/22
Inventor 金城永泰西川泰司赤堀廉一
Owner KANEKA CORP
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