Circuit protection method, protection circuit and power supply device using the protection circuit
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ROHM CO LTD
- Publication Date
- 2007-06-27
- Estimated Expiration
- Not applicable Β· inactive patent
Smart Images
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Abstract
Description
technical field
[0001] The present invention relates to a protection circuit, in particular to an overcurrent protection technology of the circuit. Background technique
[0002] In a voltage stabilizer or the like, a power MOSFET (Metal Oxicide Semiconductor Field Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), and a bipolar power transistor are provided as output transistors. Wait. These transistors are designed to have a sufficient margin for the current value that flows during normal operation as the maximum allowable current.
[0003] However, even if it is designed to have a sufficient margin in this way, when the output load circuit is short-circuited or the like, a large overcurrent exceeding the maximum allowable current flows through the output transistor, which affects the reliability of the output transistor. question. In addition, even if the output transistor's maximum allowable current is less than or equal to the maximum allowable current o...