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PCVD filming process

A process and film-forming technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems that affect the company's production plan, long cycle, high cost, etc., to reduce instability, reduce impurities, Avoid the effect of abnormal discharge

Inactive Publication Date: 2007-07-11
SHANGHAI SVA LIQUID CRYSTAL DISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of retrofitting equipment are: the cost of retrofitting is high and the cycle is long; changes in the hardware structure of equipment may bring new problems; retrofitting of equipment in production will seriously affect the company's production plan

Method used

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Effect test

Embodiment Construction

[0011] The preferred embodiments of the present invention are given below to describe the technical solution of the present invention in detail.

[0012] In a PCVD film forming process, before adjusting the RF power to the working power, the power is first set to a first power lower than the working power, such as 300 watts, and the duration is 5 seconds.

[0013] Forming a relatively stable plasma system at low power, and then increasing the power of the power supply can avoid the defect of abnormal discharge in the prior art.

[0014] In the initial stage of processing, the concentration of silicon nitride molecules in the equipment is low. At this time, directly setting the RF power as the working power may cause the impurity molecules in the equipment to attach to the work object. Now when the RF power is set to a lower power, the electric field is weaker at this time, which can reduce the impurities attached to the work object.

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Abstract

The invention discloses a filming technique of PCVD, which is characterized by the following: setting RF power at first power value; setting the RF power at working power; increasing RF low-power step; reducing insafety of Plasma; avoiding abnormal discharge; reducing attached impurity for working object under low silicon nitride density.

Description

technical field [0001] The invention relates to a PCVD film forming process. Background technique [0002] PECVD (plasma enhanced chemical vapor deposition, plasma enhanced vapor deposition) technology is a commonly used film-forming technology in the manufacture of TFT (thin film transistor, thin film transistor)-LCD (liquid crystal display, liquid crystal display) manufacturing. [0003] In the current PCVD film formation process, the working power of silicon nitride film formation is usually 2000W~5000W, so when the RF (radio frequency) suddenly increases from 0 watts to high power, the Plasma (plasma) is not very stable, so it is easy to cause abnormal discharge . [0004] For the abnormal discharge of PCVD equipment, the usual countermeasure is to analyze the mechanism of abnormal discharge, analyze the design defects of the equipment hardware, and then reduce or avoid the abnormal discharge through the improvement of equipment hardware. The disadvantages of retrofitt...

Claims

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Application Information

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IPC IPC(8): C23C16/513C23C16/52
Inventor 马哲国
Owner SHANGHAI SVA LIQUID CRYSTAL DISPLAY