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Novel method for detecting high-order critical point of semiconductor energy band structure

A technology of energy band structure and semiconductor, applied in fluorescence/phosphorescence, Raman scattering, material excitation analysis, etc., can solve problems affecting detection

Inactive Publication Date: 2007-07-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The very strong signal of the GaAs substrate will seriously affect the detection of the E0+Delta0 energy level of the GaAsN epitaxial layer material

Method used

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  • Novel method for detecting high-order critical point of semiconductor energy band structure
  • Novel method for detecting high-order critical point of semiconductor energy band structure
  • Novel method for detecting high-order critical point of semiconductor energy band structure

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Embodiment Construction

[0017] The present invention is a novel method for detecting the high-order critical point of the energy band structure of semiconductor materials, which is characterized in that it comprises the following steps:

[0018] Step 1: grow a semi-insulating semiconductor material on the substrate material, or perform isoelectronic doping on the semiconductor material during the sample growth process to form a semi-insulating binary or ternary alloy material, and the test temperature of the sample is below room temperature ;

[0019] Step 2: Use a microfluorescence spectrometer to test the low-temperature microphotoluminescence spectrum of the isoelectronic-doped semiconductor material; the microfluorescence spectrometer is equipped with a long working distance and high-power objective lens to increase the excitation light power density and Perform low-temperature photoluminescence spectroscopy measurements

[0020] Step 3: Use the physical property of different penetration depths ...

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Abstract

The method for detecting semi conducting material band structure with high level critical point starts from electron mixing on the semi conductor material or in the sample growing process, forming semi insulation ternary alloy, using microscope photoluminencence instrument mixed semi conductor material low temperature photoluminescence, eliminating optical spectrum signal to affect mixed semiconductor material, combining the changing laser wavelength and lighting strength and resonance diffusion, deciding the high level critical point of the semiconductor material.

Description

technical field [0001] The invention relates to a method for testing the energy band structure and physical property parameters of semiconductor materials and the technical field of semiconductor spectroscopy, in particular to a method for testing the spectrum of high-order critical points of semi-insulating isoelectronic doped semiconductors. Background technique [0002] The determination of semiconductor energy band structure parameters is an important research direction in the study of semiconductor materials, which is of great significance for the study of the physical properties of semiconductor materials and the application of semiconductor materials in semiconductor devices. Some critical points on the semiconductor energy band structure are very important to the determination of the semiconductor energy band structure, such as the forbidden band width E0 and some high-valence critical points E1 and E2 with higher energy. [0003] Various modulation spectroscopy meth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/63G01N21/64G01N21/65
Inventor 谭平恒徐仲英罗向东葛惟昆
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI