Inductively coupled plasma CVD

Abstract

A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

Description

[0001] The present invention relates to a method and apparatus for high-density plasma-enhanced chemical vapor deposition of semiconducting and dielectric films and more particularly to techniques for depositing such films into high aspect ratio gaps on semiconductor substrates such as silicon wafers having metal interconnection layers.DESCRIPTION OF THE RELATED ART[0002] Chemical vapor deposition (CVD) is conventionally used to form various thin films in a semiconductor integrated circuit. CVD can form thin films such as SiO.sub.2, Si.sub.3N.sub.4, Si or the like with high purity and high quality. In the reaction process of forming a thin film, a reaction vessel in which semiconductor substrates are arranged can be heated to a high temperature condition of 500 to 1000.degree. C. Raw material to be deposited can be supplied through the vessel in the form of gaseous constituents so that gaseous molecules are thermally dissociated and combined in the gas and on a surface of the substr...

AI Technical Summary

Problems solved by technology

That single step process replaced sequential gap-filling and planarization steps wherein CVD SiO.sub.2 was subjected to plasma etch-back steps, such technique being unsuitable for gap widths below 0.5 microns and aspect ratios (gap height:width) above 1.5:1.

Prior art apparatuses suffer from several serious disadvantages with respect to IMD applications.

ECR and helicon sources which rely on magnetic fields are complex and expensive.

Moreover, magnetic fields have been implicated to cause damage to semiconductor devices on the wafer.

ECR, helicon and helical resonator sources also generate plasmas remotely from the wafer, making it very difficult to produce uniform and high quality films at the same time and also difficult to perform in-situ plasma cleans necessary to keep particulates under control without additional equipment.

Furthermore, ECR, helicon and helical resonator, and domed inductively-coupled plasma systems require large, complex dielectric vacuum vessels.

As a corollary scale-up is difficult and in-situ plasma cleaning is time consuming.

In the absence of an RF bias, the film quality and gap-filling performance tend to be poor due to a jagged appearance of the sidewall film suggesting that it is very porous and heavy deposits forming above metal lines shadow the trench bottoms from deposition and eventually pinch-off the gap, leaving a void.

This results in choked, sonic flow at the outlets of the injectors.

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