Method of manufacturing a semiconductor device

Abstract

A method of manufacturing a semiconductor device, includes the steps of: grinding the rear surface of a semiconductor wafer to reduce its thickness; flattening the rear surface of the semiconductor wafer; dividing the semiconductor wafer into a plurality of semiconductor chips; forming gold bumps on the electrodes of the plurality of semiconductor chips; applying NCP to the front surface of a packaging board; and arranging the semiconductor chips over the packaging board through the NCP and pressing the back surfaces of the semiconductor chips to flip-chip bond the semiconductor chips to the packaging board. Therefore, it is possible to prevent NCP from rising onto the back surfaces of the semiconductor chips at the time of flip-chip bonding, whereby separation and cracking caused by a high-temperature treatment for assembly and mounting of a semiconductor device can be prevented and the reliability of the semiconductor device can be improved.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001] The present application claims priority from Japanese patent application No. 2003-426943, filed on Dec. 24, 2003, the content of which is hereby incorporated by reference into this application. BACKGROUND OF THE INVENTION [0002] The present invention relates in general to a semiconductor device and to a method of manufacturing the same. Specifically, it relates to a technology that may be effectively used for flip-chip bonding. [0003] For conventional flip-chip bonding using an adhesive, a semiconductor device having multi-stepped flanks is bonded to a circuit board. The semiconductor device and the circuit board are thermally bonded together through a detection member or an interposed member having a multi-layered structure, and the interposed member is broken or separated so as to be removed as required after bonding (refer to, for example, patent document 1). [0004] [Patent document 1] Japanese Unexamined Patent Publication No. 2000-2...

AI Technical Summary

Benefits of technology

[0011] It is an object of the present invention to provide a semiconductor device and a method of manufacturing the same, in which the reliability of the device can be improved.

[0041] The rear surface of the semiconductor wafer is ground to reduce the thickness, and, further, irregularities on the rear surface of the semiconductor wafer are removed by flattening the rear surface. Thereby, it is possible to prevent the resin adhesive from rising onto the back surface of a chip during flip-chip bonding, and to prevent separation between the back surface of the chip and the sealing resin and between the back surface of the chip and the die bonding material of a second semiconductor chip. As a result, the above-described separation and cracking previously caused by a high-temperature treatment used during assembly or mounting of a semiconductor device can be prevented. Accordingly, the reliability of the semiconductor device can be improved.

Problems solved by technology

In addition, due to a reduction in the pitch of the pads, it is becoming very difficult to effect under-fill sealing of a flip-chip bonded portion of such a semiconductor device because the permeation of a resin takes time.

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