Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
a laser device and laser technology, applied in the direction of lasers, laser optical resonator construction, semiconductor lasers, etc., can solve the problems of end face destruction, non-emission recombinant current increase, etc., and achieve the effect of reducing the driving current, reducing the distance and increasing the barrier height between the active layer and the barrier layer
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first embodiment
[0055] A semiconductor laser device according to the present invention will hereinafter be described along the fabrication process. Said fabrication process is shown in FIGS. 1A-1C.
[0056] As shown in FIG. 1A, an n-GaAs buffer layer 2, an n-Al0.65Ga0.35As lower cladding layer 3, an n- or i-In0.5Ga0.5P lower optical waveguide layer 4, an In0.12Ga0.88As0.75P0.25 quantum well active layer 5, a p- or i-In0.5Ga0.5P upper optical waveguide layer 6, a p-Al0.65Ga0.35As first upper cladding layer 7, a p- or i-In0.5Ga0.5P etch-stopping layer 8, a p-Al0.65Ga0.35As second upper cladding layer 9, and a p-GaAs contact layer 10, are grown epitaxially upon a (1.0.0)-plane n-GaAs substrate 1 by organometallic vapor phase epitaxy. The first upper cladding layer 7 is grown to a thickness such that an index guide wave can reach a high output at the waveguide in the groove of the center portion of the resonator.
[0057] Next, a photoresist film (not shown) is coated on the wafer, and a pre-exposure baking...
second embodiment
[0069] A semiconductor laser device according to the present invention will hereinafter be described along the fabrication method. A sectional view thereof up to the contact layer is shown in FIG. 3, and a perspective view thereof after electrode formation is shown in FIG. 4.
[0070] As shown in FIG. 3, an n-Ga0.39Al0.61As cladding layer 42, an n- or i-In0.49Ga0.51P optical waveguide layer 43, an i-In0.4Ga0.6P tensile strain barrier layer 44, an i-In0.13Ga0.87As0.75P0.25 quantum well active layer 45, an i-In0.4Ga0.6P tensile strain barrier layer 46, a p- or i-In0.49Ga0.51P optical waveguide layer 47, a p-Ga0.39Al0.61As cladding layer 48, and a p-GaAs contact layer 49, are grown epitaxially upon a (1.0.0)-plane n-GaAs substrate 41 by organometallic vapor phase epitaxy. The upper and lower optical waveguide layers 43, 47 are 0.4 μm in thickness.
[0071] Next, a photoresist film (not shown) is coated on the wafer, and a pre-exposure baking process (typically at 80 to 100° C.) is performed...
third embodiment
[0080] In the semiconductor laser device of the third embodiment, an n-Ga1-z1Alz1As cladding layer (where 0.55≦z1≦0.7), an n- or i-Inx1Ga1-x1As1-y1Py1 optical waveguide layer (where 0.4≦x1≦0.49 and y1=x1 / 0.49), an i-Inx2Ga1-x2As1-y2Py2 tensile strain barrier layer (where x2 / 0.49≦y2≦0.3+(x2 / 0.49), and 0.8 ≦y2≦1.0), an i-Inx3Ga1-x3As1-y3Py quantum well active layer (where 0.3≦x3≦0.2 and y3=x3 / 0.49), an i-Inx2Ga1-x2As1-y2Py2 tensile strain barrier layer (where x2 / 0.49≦y2≦0.3+(x2 / 0.49), and 0.8≦y2≦1.0), a p- or i-Inx1Ga1-x1As1-y1Py1 optical waveguide layer, a p- Ga1-z1Alz1As cladding layer, and a p-GaAs contact layer, are stacked on an n-GaAs substrate in the recited order. Note that each cladding layer and each optical waveguide layer have composition ratios which have a lattice match with respect to the GaAs substrate, respectively. Also, a p-InGaP etch-stopping layer with a thickness of 10 nm may be provided anywhere in the p-Ga1-z1Alz1As cladding layer.
[0081] In the second and third...
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