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Plasma processing method and apparatus

Inactive Publication Date: 2005-12-22
OKUMURA TOMOHIRO +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0022] Preferably, the above-mentioned plasma processing methods are effective particularly when the processing is the processing of etching the fine linear portion of the object to be processed.

Problems solved by technology

However, there is a defect that the process is complicated.
However, in the processing described in connection with the prior art example, the active species dissociated by the plasma effuse along the surface of the substrate 81 as indicated by arrows in FIG. 25, and this has therefore led to an issue that the processing has been disadvantageously effected beyond the desired fine linear portion. FIG. 26 shows the obtained etching profile.

Method used

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Examples

Experimental program
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first embodiment

[0113] the present invention will be described below with reference to FIGS. 1 through 4.

[0114]FIG. 1 shows a perspective view of a plasma processing apparatus provided with a microplasma source employed in the first embodiment of the present invention. FIG. 2 shows a sectional view cut in the plane A of FIG. 1. Referring to FIGS. 1 and 2, a microplasma generating-use space 3 (dot-hatching portion in FIG. 2, hereinafter referred to as a plasma space 3) of a roughly rectangular parallelepiped configuration for generating microplasma is formed as a microplasma source between two ceramic dielectric plates (ceramic plates as one example) 1 and 2. Three side portions of the ceramic dielectric plates 1 and 2 are bonded to ceramic bar-shaped dielectric members (ceramic bars as one example) 4, 5 and 6, and a substrate 11, which serves as one example of the object to be processed, is oppositely disposed with interposition of a minute gap on the remaining one side portion, constituting a micr...

second embodiment

[0122] the present invention will be described next with reference toFIGS. 5 through 8.

[0123]FIG. 5 shows a perspective view of a plasma processing apparatus provided with a microplasma source employed in the second embodiment of the present invention. FIG. 6 shows a sectional view cut in the plane A of FIG. 5. Referring to FIGS. 5 and 6, a microplasma generating-use space 3 (dot-hatching portion in FIG. 6, hereinafter referred to as a plasma space 3) of a roughly rectangular parallelepiped shape for generating microplasma is formed between two ceramic dielectric plates 1 and 2. Three side portions of the ceramic dielectric plates 1 and 2 are bonded to ceramic bar-shaped dielectric members 4, 5, and 6, and a substrate 11, which serves as one example of the object to be processed (object), is oppositely disposed with interposition of a minute gap on the remaining one side portion. Gas is supplied from a gas supply unit 7 to a gas flow passage 18 constructed of a gas flow passage spac...

third embodiment

[0130] the present invention will be described next with reference to FIGS. 9 through 13.

[0131]FIG. 9 shows a perspective view of a plasma processing apparatus provided with a microplasma source employed in the third embodiment of the present invention. FIG. 10 shows a sectional view cut in the plane A of FIG. 9. FIG. 11A shows a sectional view cut in the plane F of FIG. 9. Referring to FIGS. 9, 10, and 11A, a microplasma generating-use space 3 (dot-hatching portion in FIGS. 10 and 11A, hereinafter referred to as a plasma space 3) of a roughly rectangular parallelepiped configuration for generating microplasma is formed between two ceramic dielectric plates 1 and 2. Three side portions of the ceramic dielectric plates 1 and 2 are bonded to ceramic bar-shaped dielectric members 4, 5, and 6, and a substrate 11, which serves as one example of the object, is oppositely disposed with interposition of a minute gap on the remaining one side portion. Gas is supplied from a gas supply unit 7...

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Abstract

Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, making activated particles emitted from an opening of the microplasma source joined to the space act on the object, and forming a fine linear portion on the object. The fine linear portion is formed on the object while flowing the gas to the neighborhood of the opening along the lengthwise direction of the fine linear portion parallel to the object.

Description

BACKGROUND OF THE INVENTION [0001] The present invention relates to a plasma processing method and apparatus, particularly to a plasma processing method and apparatus using a microplasma source, and more particularly to a plasma processing apparatus and method to be applied to the manufacturing processes of electronic devices such as semiconductors and MEMS (Micro Electromechanical Systems). [0002] In general, a resist process is used when an object to be processed represented by a substrate on the surface of which a thin film is formed is subjected to a patterning process. FIG. 23 shows one example thereof. Referring to FIGS. 23A through 23D, first of all, a photoresist 27 is coated on the surface of an object 26 to be processed (see FIG. 23A). Next, if the photoresist 27 is exposed to light by means of an exposure apparatus and thereafter developed, then either of the exposed portion or the non-exposed portion of the photoresist 27 is removed, allowing the photoresist 27 to be pat...

Claims

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Application Information

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IPC IPC(8): C23F1/00G03F7/36G09G3/10H01L21/00H05H1/24H05H1/42
CPCH01J37/32082H01J37/32376H05H1/24H01L21/67069H01J37/32935H01L21/3065
Inventor OKUMURA, TOMOHIROKIMURA, TADASHIYASHIRO, YOICHIROSATO, KENICHISAITOH, MITSUO
Owner OKUMURA TOMOHIRO